Enhanced resonant tunneling in symmetric 2D semiconductor vertical heterostructure transistors

ACS Nano

Volumn 9, Issue 5, 2015, Pages 5000-5008

  Campbell, Philip M ^a,b   Tarasov, Alexey ^a   Joiner, Corey A ^a   Ready, William J ^b   Vogel, Eric M ^a  

^a Georgia Institute of Technology   (United States)

^b GEORGIA TECH RESEARCH INSTITUTE   (United States)

Author keywords

2D materials; graphene; heterostructures; molybdenum disulfide; negative differential resistance; resonance; tunneling

Indexed keywords

ELECTRODES; ELECTRON TUNNELING; GRAPHENE; GRAPHITE ELECTRODES; HETEROJUNCTIONS; LANDFORMS; NEGATIVE RESISTANCE; RESONANCE; TRANSISTORS; TRANSITION METALS;

HEXAGONAL BORON NITRIDE; MOLYBDENUM DISULFIDE; NANOSCALE ELECTRONICS; NEGATIVE DIFFERENTIAL RESISTANCES; RESONANT TUNNELING DEVICE; SEMICONDUCTOR ELECTRODE; TRANSITION METAL DICHALCOGENIDES; VERTICAL HETEROSTRUCTURE;

RESONANT TUNNELING;

EID: 84930683751     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn507174c     Document Type: Article

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