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IEEE Electron Device Letters

Volumn 22, Issue 12, 2001, Pages 582-584

The scaled performance of Si/Si 1-xGe x resonant tunneling diodes

(2) See, P b Paul, D J a,b

a IEEE (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

Germanium; Resonant tunneling diodes; Silicon; Strain

Indexed keywords

RESONANT TUNNELING DIODES (RTD);

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; RELAXATION PROCESSES; RESONANT TUNNELING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TUNNEL JUNCTIONS;

TUNNEL DIODES;

EID: 0035691726 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/55.974584 Document Type: Article

Times cited : (43)

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