SCOPUS 정보 검색 플랫폼

Volumn 27, Issue 7, 2015, Pages 1175-1181

Controlled doping of large-area trilayer MoS2with molecular reductants and oxidants

(8) Tarasov, Alexey a Zhang, Siyuan b Tsai, Meng Yen a Campbell, Philip M a Graham, Samuel c Barlow, Stephen b Marder, Seth R b Vogel, Eric M a

a Georgia Institute of Technology (United States)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

c GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

2D materials; Chemical doping; Field effect transistors; Molybdenum disulfide; Redox active species

Indexed keywords

MOLYBDENUM COMPOUNDS; OXIDANTS; REDOX REACTIONS;

CHEMICAL DOPING; CHEMICALLY DOPED; DOPING DENSITIES; ELECTRICAL MEASUREMENT; MOLYBDENUM DISULFIDE; REDOX-ACTIVE; SURFACE DIPOLE; WORK FUNCTION CHANGE;

FIELD EFFECT TRANSISTORS;

EID: 85027926700 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201404578 Document Type: Article

Times cited : (198)

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