Room-temperature resonant tunneling diode with high-Ge-fraction strained Si1-xGex and nanometer-order ultrathin Si

ECS Transactions

Volumn 33, Issue 6, 2010, Pages 379-387

  Sakuraba, Masao ^a   Takahashi, Kuniaki ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; RESONANT TUNNELING; RESONANT TUNNELING DIODES; SEMICONDUCTING GERMANIUM; SI-GE ALLOYS; SILANES; THERMIONIC EMISSION;

BAND DISCONTINUITIES; GROUP-IV SEMICONDUCTORS; LARGE SCALE INTEGRATED CIRCUIT; LOWER TEMPERATURES; NEGATIVE DIFFERENTIAL CONDUCTANCE; QUANTUM HETEROSTRUCTURES; QUANTUM-EFFECT DEVICES; THERMIONIC EMISSION CURRENT;

POTASSIUM COMPOUNDS;

EID: 79952636495     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3487569     Document Type: Conference Paper

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