Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions

Applied Physics Letters

Volumn 104, Issue 12, 2014, Pages

  Roy, T ^a   Liu, L ^b   De La Barrera, S ^c   Chakrabarti, B ^a,d   Hesabi, Z R ^a   Joiner, C A ^a   Feenstra, R M ^c   Gu, G ^b   Vogel, E M ^a  

^a Georgia Institute of Technology   (United States)

^b University of Tennessee Knoxville   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

^d The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; FIELD EFFECT TRANSISTORS; SUPERCONDUCTING MATERIALS; VAPORS;

CHEMICAL VAPOR DEPOSITED; DENSITY-OF-STATES; GATE CONTROL; HEXAGONAL BORON NITRIDE; LATERAL MOMENTUM; RESONANT BEHAVIOR; RESONANT PEAKS; TUNNELING CHARACTERISTICS;

GRAPHENE;

EID: 84897403933     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4870073     Document Type: Article

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