Theory of graphene-insulator-graphene tunnel junctions

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 32, Issue 4, 2014, Pages

  De La Barrera, Sergio C ^a   Gao, Qin ^a   Feenstra, Randall M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GRAPHENE; GRAPHITE ELECTRODES; MOMENTUM;

DENSITY OF STATE; GRAPHENE ELECTRODES; MOMENTUM CONSERVATIONS; NON-LINEAR CURRENT-VOLTAGE CHARACTERISTICS; THEORETICAL TREATMENTS; TRANSISTOR STRUCTURE; VERTICAL TUNNELING; ZERO-MOMENTUM;

TUNNEL JUNCTIONS;

EID: 84919477409     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4871760     Document Type: Article

References (29)

1. S. K. Banerjee, L. F. Register, E. Tutuc, D. Reddy, and A. H. MacDonald, IEEE Electron Device Lett. 30, 158 (2009). 10.1109/LED.2008.2009362
2. D. Basu, L. F. Register, D. Reddy, A. H. MacDonald, and S. K. Banerjee, Phys. Rev. B 82, 075409 (2010). 10.1103/PhysRevB.82.075409
3. R. M. Feenstra, D. J. Jena, and G. Gu, J. Appl. Phys. 111, 043711 (2012). 10.1063/1.3686639
4. L. Britnell et al., Science 335, 947 (2012). 10.1126/science.1218461
5. T. Roy, Z. R. Hesabi, C. A. Joiner, A. Fujimoto, and E. M. Vogel, Microelectron. Eng. 109, 117 (2013). 10.1016/j.mee.2013.02.090
6. L. Britnell, R. V. Gorbachev, A. K. Geim, L. A. Ponomarenko, A. Mishchenko, M. T. Greenaway, T. M. Fromhold, K. S. Novoselov, and L. Eaves, Nat. Commun. 4, 1794 (2013). 10.1038/ncomms2817
7. S. Bala Kumar, G. Seol, and J. Guo, Appl. Phys. Lett. 101, 033503 (2012). 10.1063/1.4737394
8. B. Sensale-Rodriguez, Appl. Phys. Lett. 103, 123109 (2013). 10.1063/1.4821221
9. V. Ryzhii, A. Satou, T. Otsuiji, M. Ryzhii, V. Mitin, and M. S. Shur, J. Phys. D: Appl. Phys. 46, 315107 (2013). 10.1088/0022-3727/46/31/315107
10. J. Bardeen, Phys. Rev. Lett. 6, 57 (1961). 10.1103/PhysRevLett.6.57
11. C. B. Duke, Tunneling in Solids (Academic, New York, 1969).
12. A. D. Gottlieb and L. Wesoloski, Nanotechnology 17, R57 (2006). 10.1088/0957-4484/17/8/R01
13. F. A. Chaves, D. Jimenez, A. W. Cummings, and S. Roche, e-print arXiv:1309.0390 [cond-mat.mes-hall].
14. C. V. Thompson, Annu. Rev. Mater. Sci. 20, 245 (1990). 10.1146/annurev.ms.20.080190.001333
15. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
16. P. E. Blochl, Phys. Rev. B 50, 17953 (1994). 10.1103/PhysRevB.50.17953
17. G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999). 10.1103/PhysRevB.59.1758
18. K. Watanbe, T. Taniguchi, and H. Kanda, Nature Mater. 3, 404 (2004). 10.1038/nmat1134
19. Y.-C. Chang, Phys. Rev. B 25, 605 (1982). 10.1103/PhysRevB.25.605
20. Y.-C. Chang and J. N. Schulman, Phys. Rev. B 25, 3975 (1982). 10.1103/PhysRevB.25.3975
21. R. M. Feenstra and M. Widom, Ultramicroscopy 130, 101 (2013). 10.1016/j.ultramic.2013.02.011
22. J. Robertson, Phys. Rev. B 29, 2131 (1984). 10.1103/PhysRevB.29.2131
23. X. Blase, A. Rubio, S. G. Louie, and M. L. Cohen, Phys. Rev. B 51, 6868 (1995). 10.1103/PhysRevB.51.6868
24. L. Britnell et al., Nano Lett. 12, 1707 (2012). 10.1021/nl3002205
25. N. Kharche and S. K. Nayak, Nano Lett. 11, 5274 (2011). 10.1021/nl202725w
26. T. Roy, L. Liu, S. de la Barrera, B. Chakrabarti, Z. R. Hesabi, C. A. Joiner, R. M. Feenstra, G. Gu, and E. M. Vogel, Appl. Phys. Lett. 104, 123506 (2014). 10.1063/1.4870073
27. P. Zhao, R. M. Feenstra, G. Gu, and D. Jena, IEEE Trans. Electron. Devices 60, 951 (2013). 10.1109/TED.2013.2238238
28. L. A. Ponomarenko et al., J. Appl. Phys. 113, 136502 (2013). 10.1063/1.4795542
29. L. Brey, e-print arXiv:1403.6073 [cond-mat.mes-hall].