Electrical transport properties of Ge-doped GaN nanowires

Nanotechnology

Volumn 26, Issue 13, 2015, Pages

  Schafer M ^a   Gunther M ^a   Langer C ^a   Mussener J ^a   Feneberg, M ^b   Uredat, P ^a   Elm, M T ^a   Hille, P ^a   Schormann J ^a   Teubert, J ^a   Henning, T ^a   Klar, P J ^a   Eickhoff, M ^a  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

Charge carrier concentration; Electrical transport properties; Gallium nitride; GaN nanowires; Micro photoluminescence; Molecular beam epitaxy; Seebeck coefficient

Indexed keywords

CHARGE CARRIERS; ENERGY GAP; GALLIUM NITRIDE; GERMANIUM; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEEBECK COEFFICIENT; TEMPERATURE; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES;

BAND GAP RENORMALIZATION; ELECTRICAL TRANSPORT PROPERTIES; GAN NANOWIRES; MICRO PHOTOLUMINESCENCE; MICROPHOTOLUMINESCENCE SPECTROSCOPY; NEAR BAND EDGE EMISSIONS; SEEBECK COEFFICIENT MEASUREMENT; TEMPERATURE DEPENDENCE;

CARRIER CONCENTRATION;

EID: 84925357481     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/26/13/135704     Document Type: Article

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