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Applied Physics Letters

Volumn 95, Issue 14, 2009, Pages

Size-dependent photoconductivity and dark conductivity of m -axial GaN nanowires with small critical diameter

(6) Chen, Hsin Yi a Chen, Reui San b Chang, Fu Chieh a Chen, Li Chyong a Chen, Kuei Hsien a,b Yang, Ying Jay a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; CRITICAL DIAMETER; CRITICAL VALUE; DARK CONDUCTIVITY; GAN NANOWIRES; LIGHT ILLUMINATION; ORDERS OF MAGNITUDE; PHOTOCURRENT MEASUREMENT; SIZE DEPENDENCE; SIZE EFFECTS; SURFACE DEPLETION; TEMPERATURE-DEPENDENT MEASUREMENTS; THERMAL ACTIVATION MECHANISMS;

CARRIER LIFETIME; CARRIER MOBILITY; CRYSTAL GROWTH; ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM; TRANSPORT PROPERTIES;

CHEMICAL VAPOR DEPOSITION;

EID: 70350014961 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3213556 Document Type: Article

Times cited : (38)

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