Properties of metal-insulator transition and electron spin relaxation in GaN:Si

Physical Review B - Condensed Matter and Materials Physics

Volumn 83, Issue 16, 2011, Pages

  Wolos, A ^a   Wilamowski, Z ^a,b   Piersa, M ^c   Strupinski, W ^c   Lucznik, B ^d   Grzegory, I ^d   Porowski, S ^d  

^a INSTITUTE OF PHYSICS   (Poland)

^b UNIVERSITY OF WARMIA AND MAZURY IN OLSZTYN   (Poland)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79961057157     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.165206     Document Type: Article

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