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Volumn 90, Issue 7, 2014, Pages

Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3

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EID: 84925376029     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.90.075203     Document Type: Article
Times cited : (151)

References (47)
  • 1
    • 36048937855 scopus 로고
    • PPSBAP 0370-1301 10.1088/0370-1301/67/10/306
    • T. S. Moss, Proc. Phys. Soc. B 67, 775 (1954). PPSBAP 0370-1301 10.1088/0370-1301/67/10/306
    • (1954) Proc. Phys. Soc. B , vol.67 , pp. 775
    • Moss, T.S.1
  • 2
    • 33646202250 scopus 로고
    • PHRVAO 0031-899X 10.1103/PhysRev.93.632
    • E. Burstein, Phys. Rev. 93, 632 (1954). PHRVAO 0031-899X 10.1103/PhysRev.93.632
    • (1954) Phys. Rev. , vol.93 , pp. 632
    • Burstein, E.1
  • 3
    • 0001371339 scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.24.1971
    • K.-F. Berggren and B. E. Sernelius, Phys. Rev. B 24, 1971 (1981). PRBMDO 0163-1829 10.1103/PhysRevB.24.1971
    • (1981) Phys. Rev. B , vol.24 , pp. 1971
    • Berggren, K.-F.1    Sernelius, B.E.2
  • 4
    • 84919032582 scopus 로고
    • ADPHAH 0001-8732 10.1080/00018737800101484
    • R. A. Abram, G. J. Rees, and B. L. H. Wilson, Adv. Phys. 27, 799 (1978). ADPHAH 0001-8732 10.1080/00018737800101484
    • (1978) Adv. Phys. , vol.27 , pp. 799
    • Abram, R.A.1    Rees, G.J.2    Wilson, B.L.H.3
  • 5
    • 0019016773 scopus 로고
    • ENERGY GAP IN Si AND Ge: IMPURITY DEPENDENCE.
    • DOI 10.1063/1.327994
    • G. D. Mahan, J. Appl. Phys. 51, 2634 (1980). JAPIAU 0021-8979 10.1063/1.327994 (Pubitemid 11429193)
    • (1980) Journal of Applied Physics , vol.51 , Issue.5 , pp. 2634-2646
    • Mahan, G.D.1
  • 8
    • 84880325219 scopus 로고    scopus 로고
    • ASUSEE 0169-4332 10.1016/j.apsusc.2013.02.094
    • S. N. Svitasheva and A. M. Gilinsky, Appl. Surf. Sci. 281, 109 (2013). ASUSEE 0169-4332 10.1016/j.apsusc.2013.02.094
    • (2013) Appl. Surf. Sci. , vol.281 , pp. 109
    • Svitasheva, S.N.1    Gilinsky, A.M.2
  • 13
    • 0000444445 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.60.4715
    • F. Binet, J. Y. Duboz, J. Off, and F. Scholz, Phys. Rev. B 60, 4715 (1999). PRBMDO 0163-1829 10.1103/PhysRevB.60.4715
    • (1999) Phys. Rev. B , vol.60 , pp. 4715
    • Binet, F.1    Duboz, J.Y.2    Off, J.3    Scholz, F.4
  • 15
    • 0342984171 scopus 로고    scopus 로고
    • Band-gap narrowing and potential fluctuation in Si-doped GaN
    • DOI 10.1063/1.122964, PII S0003695199006014
    • I.-H. Lee, J. J. Lee, P. Kung, F. J. Sanchez, and M. Razeghi, Appl. Phys. Lett. 74, 102 (1999). APPLAB 0003-6951 10.1063/1.122964 (Pubitemid 129709979)
    • (1999) Applied Physics Letters , vol.74 , Issue.1 , pp. 102-104
    • Lee, I.-H.1    Lee, J.J.2    Kung, P.3    Sanchez, F.J.4    Razeghi, M.5
  • 20
    • 36049052793 scopus 로고
    • PHRVAO 0031-899X 10.1103/PhysRev.153.882
    • G. D. Mahan, Phys. Rev. 153, 882 (1967). PHRVAO 0031-899X 10.1103/PhysRev.153.882
    • (1967) Phys. Rev. , vol.153 , pp. 882
    • Mahan, G.D.1
  • 22
    • 34547168902 scopus 로고    scopus 로고
    • On the lattice parameters of GaN
    • DOI 10.1063/1.2753122
    • V. Darakchieva, B. Monemar, and A. Usui, Appl. Phys. Lett. 91, 031911 (2007). APPLAB 0003-6951 10.1063/1.2753122 (Pubitemid 47120662)
    • (2007) Applied Physics Letters , vol.91 , Issue.3 , pp. 031911
    • Darakchieva, V.1    Monemar, B.2    Usui, A.3
  • 28
    • 0141546306 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.56.9496
    • P. Bogusławski and J. Bernholc, Phys. Rev. B 56, 9496 (1997). PRBMDO 0163-1829 10.1103/PhysRevB.56.9496
    • (1997) Phys. Rev. B , vol.56 , pp. 9496
    • Bogusławski, P.1    Bernholc, J.2
  • 29
    • 84875725672 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.4795339
    • J. Jung and T. G. Pedersen, J. Appl. Phys. 113, 114904 (2013). JAPIAU 0021-8979 10.1063/1.4795339
    • (2013) J. Appl. Phys. , vol.113 , pp. 114904
    • Jung, J.1    Pedersen, T.G.2
  • 33
    • 16444375543 scopus 로고
    • PHRVAO 0031-899X 10.1103/PhysRev.108.1384
    • R. J. Elliot, Phys. Rev. 108, 1384 (1957). PHRVAO 0031-899X 10.1103/PhysRev.108.1384
    • (1957) Phys. Rev. , vol.108 , pp. 1384
    • Elliot, R.J.1
  • 41
    • 85043064218 scopus 로고    scopus 로고
    • Talk at the International Workshop on Nitride Semiconductors, Tampa, (unpublished).
    • P. P. Paskov, Talk at the International Workshop on Nitride Semiconductors, Tampa, 2010 (unpublished).
    • (2010)
    • Paskov, P.P.1
  • 45
    • 0003019646 scopus 로고
    • PHRVAO 0031-899X 10.1103/PhysRev.131.79
    • E. O. Kane, Phys. Rev. 131, 79 (1963). PHRVAO 0031-899X 10.1103/PhysRev.131.79
    • (1963) Phys. Rev. , vol.131 , pp. 79
    • Kane, E.O.1
  • 46
    • 0001642275 scopus 로고
    • RMPHAT 0034-6861 10.1103/RevModPhys.64.755
    • P. Van Mieghem, Rev. Mod. Phys. 64, 755 (1992). RMPHAT 0034-6861 10.1103/RevModPhys.64.755
    • (1992) Rev. Mod. Phys. , vol.64 , pp. 755
    • Van Mieghem, P.1
  • 47


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.