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Volumn 36, Issue 3 B, 2006, Pages 824-827

Electron mobility study of hot-wall CVD GaN and InN nanowires

Author keywords

Electron transport; GaN; InN; Nanowires

Indexed keywords


EID: 33845452891     PISSN: 01039733     EISSN: 01039733     Source Type: Journal    
DOI: 10.1590/S0103-97332006000600007     Document Type: Conference Paper
Times cited : (7)

References (15)
  • 9
    • 33845468992 scopus 로고    scopus 로고
    • note
    • We should mention, however, that calculations for the diffusion barrier of hydrogen predict ∼3.4 eV, a reason for which hydrogen in not very mobile and large amounts of hydrogen are not readily incorporated during growth [10].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.