High Si and Ge n-type doping of GaN doping - Limits and impact on stress

Applied Physics Letters

Volumn 100, Issue 12, 2012, Pages

  Fritze, S ^a   Dadgar, A ^a   Witte, H ^a   Bugler M ^b   Rohrbeck, A ^a   Blasing J ^a   Hoffmann, A ^b   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

3-D GROWTH; CRYSTAL QUALITIES; DOPED SAMPLE; FREE CARRIER CONCENTRATION; GE-DOPING; HALL EFFECT MEASUREMENT; MATERIAL QUALITY; N-TYPE DOPING; RAMAN MEASUREMENTS; SECONDARY ION MASS SPECTROSCOPY; SI-DOPING; X-RAY DIFFRACTION MEASUREMENTS;

GALLIUM NITRIDE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON; X RAY DIFFRACTION;

GERMANIUM;

EID: 84859525812     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3695172     Document Type: Article

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