Thermoelectric power measurements of wide band gap semiconducting nanowires

Applied Physics Letters

Volumn 94, Issue 2, 2009, Pages

  Lee, Chul Ho ^a   Yi, Gyu Chul ^b   Zuev, Yuri M ^c   Kim, Philip ^c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Seoul National University   (South Korea)

^c Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CIVIL AVIATION; ELECTRIC WIRE; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL EFFECT; MAGNETIC FIELD EFFECTS; NANOWIRES; OHMIC CONTACTS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

LINEARLY DEPENDENTS; MAJORITY CARRIERS; NANOWIRE FIELD EFFECT TRANSISTORS; ROOM TEMPERATURES; SEMICONDUCTING NANOWIRES; TEMPERATURE RANGES; TRANSPORT MEASUREMENTS; WIDE BANDS; ZNO NANOWIRES;

THERMOELECTRIC POWER;

EID: 58349098217     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3067868     Document Type: Article

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