MOSFETs made from GaN nanowires with fully conformal cylindrical gates

IEEE Transactions on Nanotechnology

Volumn 11, Issue 3, 2012, Pages 479-482

  Blanchard, Paul T ^a   Bertness, Kris A ^a   Harvey, Todd E ^a   Sanders, Aric W ^a   Sanford, Norman A ^a   George, Steven M ^b   Seghete, Dragos ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

Atomic layer deposition (ALD); conformal gate; gallium nitride; MOSFETs; nanowires

Indexed keywords

CHARGE TRAP; CONFORMAL GATE; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; GATE VOLTAGES; MAXIMUM TRANSCONDUCTANCE; MEMORY EFFECTS; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFETS; NANOWIRE MOSFETS; ON/OFF CURRENT RATIO; PINCHOFF; REVERSE-BIAS;

ATOMIC LAYER DEPOSITION; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; NANOWIRES;

MOSFET DEVICES;

EID: 84860880958     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2177993     Document Type: Article

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