Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

Applied Physics Letters

Volumn 103, Issue 20, 2013, Pages

  Tchoulfian, P ^a,b   Donatini, F ^b   Levy, F ^a   Amstatt, B ^a   Dussaigne, A ^a   Ferret, P ^a   Bustarret, E ^b   Pernot, J ^b,c  

^a CEA LETI   (France)

^b CNRS   (France)

^c INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT INCORPORATION; HIGH CONDUCTIVITY; MICRO RAMAN MEASUREMENTS; MICRO WIRE; MICRO-RAMAN; NON PARABOLICITY; PLANAR LAYERS;

CARRIER CONCENTRATION; GALLIUM NITRIDE; SILICON; WIRE;

DOPING (ADDITIVES);

EID: 84889649925     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4829857     Document Type: Article

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