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Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

On the strain in n-type GaN

(8) Xie, Jinqiao a Mita, Seiji a Hussey, Lindsay b Rice, Anthony b Tweedie, James b Lebeau, James b Collazo, Ramón a,b Sitar, Zlatko a,b

a HexaTech Inc (United States)

b North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT SPECIES; EFFECT MODEL; GE-DOPING; STRAIN EVOLUTION;

EPITAXIAL GROWTH; GALLIUM NITRIDE; GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

TENSILE STRAIN;

EID: 80054002152 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3647772 Document Type: Article

Times cited : (25)

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