Studies of photoconductivity and field effect transistor behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires in vacuum and air

Journal of Applied Physics

Volumn 113, Issue 17, 2013, Pages

  Sanford, N A ^a   Robins, L H ^a   Blanchard, P T ^a   Soria, K ^b   Klein, B ^b   Eller, B S ^c   Bertness, K A ^a   Schlager, J B ^a   Sanders, A W ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUATION-BASED MODELS; FIELD EFFECT TRANSISTOR (FETS); FREE CARRIER CONCENTRATION; NEGATIVE SURFACE CHARGES; PHOTOCONDUCTIVE DETECTORS; POLARIZATION DEPENDENCE; SPECTRAL DEPENDENCES; TEMPERATURE DEPENDENT;

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOTOCONDUCTIVITY; POISSON EQUATION; SILICON; UNCERTAINTY ANALYSIS; VACUUM;

AIR MOBILITY;

EID: 84877778151     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4802689     Document Type: Conference Paper

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