Magnetic memory: Fundamentals and technology

Magnetic Memory: Fundamentals and Technology

Volumn 9780521449649, Issue , 2010, Pages 1-196

  Tang, Denny D ^a   Lee, Yuan Jen ^a  

^a MagIC Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL ENGINEERING; MAGNETIC DEVICES; MAGNETIC STORAGE; MAGNETISM; MRAM DEVICES; SEMICONDUCTOR STORAGE; STUDENTS; TUNNELLING MAGNETORESISTANCE;

ARRAY ARCHITECTURE; CHARACTERIZATION METHODS; ENGINEERING DESIGN; GRADUATE STUDENTS; MAGNETIC MEMORY; MEMORY PERFORMANCE; SEMICONDUCTOR MEMORY; TUNNELING MAGNETORESISTANCE;

MEMORY ARCHITECTURE;

EID: 84925201373     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1017/CBO9780511676208     Document Type: Book

References (158)

1. C. Kittel, Introduction to Solid State Physics, 3rd edn (New York: John Wiley & Sons, Inc., 1968).
2. N. Spaldin, Magnetic Materials Fundamentals and Device Applications (Cambridge: Cambridge University Press, 2003).
3. W. E. Brown, Jr., IEEE Trans. Magnetics 20(1), 112 (1984).
4. R. E. Collin, Field Theory of Guided Waves (New York: McGraw-Hill, 1960), sect. 1.1.
5. N. Bohr, Phil. Mag. 26, 1 (1913).
6. A. Sommerfeld, Annalen de. Phys. 51(1), 125 (1916).
7. P. Langevin, Annales de Chim. et Phys. 5, 70 (1905).
8. P. Curie, Ann. Chim. Phys. 5, 289 (1895).
9. P. Weiss, Compt. Rend. 143, 1136 (1906).
10. P. Weiss, J. de Phys. 6, 661 (1907).
11. D. Jiles, Introduction to Magnetism and Magnetic Materials (London: Chapman & Hall, 1989).
12. L. Néel, Annales de Phys. 18, 5 (1932).
13. W.H. Meiklejohn and C.P. Bean, Phys. Rev. 102, 1413 (1956).
14. W.H. Meiklejohn, and C.P. Bean, Phys. Rev. 105, 904 (1957).
15. J. Nogues, and I. K. Schuller, J. Magn. & Magn. Mater. 192, 203 (1999).
16. G. W. Anderson, Y. Huai and M. Pakala, J. Appl. Phys. 87, 5726 (2000).
17. J. Nogues, D. Lederman, T. J. Moran and I. K. Schuller, Phys. Rev. Lett. 76, 4624 (1996).
18. H. N. Bertram and J. G. Zhu, Fundamental Magnetization Processes in Thin-Film Recording Media, Solid State Physics, Vol. 46 (New York: Academic Press, 1992), p. 299.
19. B. D. Cullity, Introduction to Magnetic Materials (Reading, MA: Addison-Wesley, 1972), p. 240.
20. W. P. Meiklejohn, J. Appl. Phys. 33, 1328 (1962).
21. D. Mauri, H. C. Siegmann, P. S. Bagus and E. Kay, J. Appl. Phys. 62, 3047 (1987).
22. A. P. Malozemoff, Phys. Rev. B 35, 3679 (1987).
23. P. Grunberg, R. Schreiber, Y. Pang, M. B. Brodsky and H. Sowers, Phys. Rev. Lett. 57, 2442 (1986).
24. S. S. P. Parkin, N. More and K. P. Roche, Phys. Rev. Lett. 64, 2304 (1990).
25. S. S. P. Parkin, R. Bhadra and K. P. Roche, Phys. Rev. Lett. 66, 2152 (1991).
26. S. S. P. Parkin, Phys. Rev. Lett. 67, 3598 (1991).
27. R. Coehoorn, Phys. Rev. B 44, 9331 (1991).
28. M. T. Johnson, S. T. Purcell, N. W. E. McGee, R. Coehoorn, J. aan de Stegge and W. Hoving, Phys. Rev. Lett. 68, 2688 (1992).
29. J. Unguris, R. J. Celotta and D. T. Pierce, Phys. Rev. Lett. 79, 2734 (1997).
30. P. A. Grunberg, Sensors & Actuators A 91, 153 (2001).
31. M. A. Ruderman and C. Kittel, Phys. Rev. 96, 99 (1954).
32. C. Kittel, Quantum Theory of Solids (New York: Wiley, 1963), p. 360.
33. L. Neel and C. R. Hebd, Seances Acad. Sci. 255, 1545 (1962).
34. L. Neel and C. R. Hebd, Seances Acad. Sci. 255, 1676 (1962).
35. L. D. Landau and E. M. Lifshitz, Sov. Phys. 8, 153 (1935).
36. T. L. Gilbert, Phys. Rev. 100, 1243 (1995).
37. J. A. Osborn, Phys. Rev. 67, 351 (1945).
38. E. C. Stoner, Phil. Mag. 36(7), 803 (1945).
39. C. Kittel, Introduction to Solid State Physics, 3rd edn (New York: John Wiley & Sons, Inc., 1968).
40. S. Middelhoek, Ferromagnetic domain in NiFe film, Unpublished Ph.D. thesis, University of Amsterdam (1961).
41. J. -S. Yang, C. -R. Chang, W. C. Lin and D. D. Tang, IEEE Trans. Magnetics 41(2), 879 (2005).
42. K. Ounadjala and F. B. Jenne, Asymmetric Dot Shape for Increasing Select-Unselect Margin in MRAM Devices, US Patent 6798691 (2003).
43. D. D. Tang, P. K. Wang, V. S. Sperious, S. Le, R. E. Fontana and S. Rishton, IEDM Technical Digest (1995), p. 997.
44. C. R. Chang and J. S. Yang, MRAM free layer magnetic state and switching behavior, Semi-annual report to TSMC, Private communication (July 29, 2004).
45. W. Thomson, Proc. Roy. Soc. London 8, 546 (1857).
46. M.N. Baibich, J. M. Broto, A. Fert, et al. Phys. Rev. Lett. 61, 2472 (1988).
47. G. Binasch, P. Grunberg, F. Saurenbach and W. Zinn, Phys Rev. B 39, 4828 (1989).
48. R. Meservey, P. M. Tedrow and P. Fulde, Phys. Rev. Lett. 25(18), 1270 (1970).
49. P. M. Tedrow and R. Meservey, Phys. Rev. Lett. 26(4), 192 (1971).
50. M. Julliere, Phys. Lett. 54A(3), 225 (1975).
51. T. Miyazaki and N. Tezuka, J. Magn. & Magn. Mater. 151, 403 (1995).
52. T. Miyazaki and N. Tezuka, J. Magn. & Magn. Mater. 139, L231 (1995).
53. J. S. Moodera, L. R. Kinder, T. M. Wong and R. Meservey, Phys. Rev. Lett. 74(16), 3273 (1995).
54. J. S. Moodera, J. Nowak and R. J. M. van de Veerdonk, Phys. Rev. Lett. 80 2941 (1998).
55. J. C. Slonczewski, Phys. Rev. B 39, 6995 (1898).
56. W. H. Butler, X. -G. Zhang, T. C. Schulthess and J. M. MacLaren, Phys. Rev. B 63, 054416 (2001).
57. J. Mathon and A. Umerski, Phys. Rev B. 63, 220403 (2001).
58. S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki and K. Ando, Nat. Mater. 3, 868(2004).
59. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant and S. -H. Yang, Nat. Mater. 3, 862 (2004).
60. H. Ohmori, T. Hatori and S. Nakagawa, J. Appl. Phys. 103, 07A911 (2008).
61. N. Nishimura, T. Hirai, A. Koganei, T. Ikeda, K. Okano, Y. Sekiguchi and Y. Osada, J. Appl. Phys. 91, 5246 (2002).
62. A. V. Pohm, J. M. Daughton, J. Brown and R. Beech, IEEE Trans. Magnetics 31 (6, Pt. 1), 3200 (1995).
63. J. -C. Wu, H. L. Stadler and R. R. Katti, High Speed Magneto-resistive Random Access Memory, US patent 5173873 (1992).
64. K. T. Kung, D. D. Tang and P. -K. Wang et al., Nonvolatile Magnetoresistive Storage Device Using Spin Valve Effect, US patent 5343422 (1994).
65. T. Inoue, Superconductor Magnetic Memory Cell and Method for Accessing the Same, US patent 5276639 (1994).
66. J. M. Daughton, “Magnetic spin devices: 7 years from lab to product,” Symposium X, MRS Fall Meeting, Boston, MA, Dec. 1 (2004).
67. D. D. Tang, P. K. Wang, V. S. Speriosu, S. Le, R. E. Fontana and S. Rishton, IEDM Technical Digest (1995), p. 997.
68. J. S. Moodera, R. Meservey, and X. Hao, Phys. Rev. Lett. 70(6), 853 (1993).
69. T. Yaoi, S. Ishio and T. Miyazaki, J. Magn. & Magn. Mater. 126, 430 (1993).
70. R. Meservey and P. M. Tedrow, Phys. Rep. 238(4), 214 (1994).
71. K. Matsuyama, H. Asada, S. Ikeda and K. Taniguchi, IEEE Trans. Magnetics, 31(6), 3176 (1995).
72. W. J. Gallagher and S. S. P. Parkin, IBM J. Research & Development, Special issue on Spintronics 50(1) (2006).
73. Y. Asao, T. Kajiyama, Y. Fukuzumi et al., IEDM Technical Digest (2004).
74. T. Tsuji, H. Tanizaki, M. Ishikawa et al., Symposium on VLSI Circuits, Digest of Papers, Honolulu, June 17 -19 (2004), p. 451.
75. G. M. Yin, F. O. Eynde and W. Sansen, IEEE J. Solid-State Circuits 27(2), 208 (1992).
76. S. Tehrani, B. Engel, J. M. Slaughter et al., ISSCC Technical Digest Papers 43,130 (2000).
77. H. Honjo, R. Nebashi, T. Suzuki, S. Fukami, N. Ishiwata, T. Sugibayashi and N. Kasai, J. Appl. Phys. 103, 07A711 (2008).
78. K. S. Kim, C. E. Lee and S. H. Lim, IEEE Trans. Magnetics 39(5), 2857 (2003).
79. J. Zhu and X. Zhu, Private communications (2001).
80. M. Lin, Private communication (2004).
81. T. Yamamoto, H. Kano, Y. Higo et al., J. Appl. Phys. 97, 10P503 (2005).
82. A. F. Popcov, L. L. Savchenko, N. V. Vorotnikov, S. Tehrani and J. Shi, Appl. Phys. Lett. 77, 277 (2000).
83. J. Shi and S. Tehrani, Appl. Phys. Lett. 77, 1692 (2000).
84. N. Shimonura, T. Kishi, M. Yoshikawa, E. Kitagawa, Y. Asao, H. Hada, H. Yoda and S. Tahara, IEEE Trans. Magnetics 41(10), 2652 (2005).
85. H. Honigschmid, P. Beer, A. Bette et al., IEEE Digest ISSCC (2006), paper 7.3, p. 136
86. W. R. Reohr and R. E. Scheuerlein, Segmented write line architecture for writing magnetic random access memories, US Patent 6335890 (January 1, 2002).
87. K. Ounadjala and F. B. Jenne, Asymmetric dot shape for increasing select-unselect margin in MRAM devices, US Patent 6798691 (2001).
88. T. Kai, M. Yoshikawa, Y. Fukuzumi et al., IEDM Technical Digest (2004), p. 583.
89. M. Nakayama, T. Kai, S. Ikegawa et al., IEEE Trans. Magnetics 42(10), 2757 (2006).
90. S. C. Oh, J. E. Lee, H. -J. Kim et al., J. Appl. Phys. 97, 10P509 (2005).
91. Y. Iwata, K. Tsuchida, T. Inaba et al., IEEE Digest ISSCC (2006), paper 7.4, p. 138.
92. T. Takenaga, T. Kuroiwa, J. Tsuchimoto, R. Matsuda, S. Ueno, H. Takada
93. Y. Abe and Y. Tokuda, IEEE Trans. Magnetics 43(6), 2352 (2007).
94. L. Savtchenko, B. N. Engel, N. D. Rizzo, M. F. Deherrera and J. A. Janesky, Method of Writing to Scalable Magnetoresistive Random Access Memory Element, US patent 652-5906 (2003).
95. D. C. Worledge, Appl. Phys. Lett. 84, 2847 (2004).
96. M. Motoyoshi, I. Yamamura, W. Ohtsuka et al., IEEE Symposium on VLSI Technology, Honolulu, June 15-17 (2004), p. 22.
97. T. Suzuki, Y. Fukumoto, K. Mori et al., IEEE Symposium on VLSI Technology, Technical Digest, Kyoto, June 14-16 (2005), papers 10B-3, p. 188.
98. Y. Fukumoto, T. Suzuki and S. Tahara, Appl. Phys. Lett. 89, 861-909 (2006).
99. C. -C. Hung, Y. -J. Lee, M. -J. Kao et al., Appl. Phys. Lett. 88, 112-501 (2006).
100. D. W. Abraham and D. C. Worledge, Appl. Phys. Lett. 88, 262-505 (2006).
101. S. -Y. Wang, H. Fujiwara and M. Sun, J. Appl. Phys. 99, 08N903 (2006).
102. Y. -J. Lee, C. -C. Hung, D. -Y. Wang et al, Appl. Phys. Lett. 90, 432-503 (2007).
103. I. L. Prejbeanu, W. Kula, K. Ounadjela, R. C. Sousa, O. Redon, B. Dieny and
104. J. -P. Nozieres, IEEE Trans. Magnetics 40(4), 26-25 (2004).
105. N. Sakimura, T. Sugibayashi, T. Honda, H. Honjo, S. Saito, T. Suzuki, N. Ishiwata and S. Tahara, IEEE J. Solid-State Circuits 42(4), 830 (2007).
106. H. W. Schumacher, C. Chappert, R. C. Sousa, P. P. Freitas, J. Miltat and J. Ferre;, J. Appl. Phys. 93, 7290 (2003).
107. J. C. Slonsczewski, Electronic Device Using Magnetic Components, US Patent 5695894 (1997).
108. Y. Lassailly, H. -J. Drouhin, A. J. van der Sluijs, G. Lampel and C. Marliere, Phys. Rev. B 50, 13054 (1994).
109. G. J. Strijkers, Phys. Rev. B 63, 104-510 (2001).
110. S. X. Huang, Y. T. Chen and C. L. Chien Appl. Phys. Lett. 92, 242-509 (2008).
111. J. C. Slonczewski, J. Magn. & Magn. Mater. 159, L1 (1996).
112. L. Berger, Phys. Rev. B 54, 9353 (1996).
113. M. Tsoi, A. G. M. Jansen, J. Bass, W. -C. Chiang, M. Seck, V. Tsoi and P. Wyder, Phys. Rev. Lett. 80, 4281 (1998).
114. E. B. Meyers, D. C. Ralph, J. A. Katine, R. N. Louie and R. A. Buhrman, Science285(6), 867 (1999), www.sciencemag.org.
115. J. Grollier, V. Cros, A. Hamzic et al., Appl. Phys. Lett. 78(23), 509 (2001).
116. D. C. Ralph and M. D. Stiles, Spin Transfer Torques, http://cnst.nist.gov/epg/Pubs/pdf/epg791.pdf (2007).
117. A. Fert, V. Cros and J. -M. George et al., J. Magn. & Magn. Mater. 272-276(3), 1706 (2004).
118. J. Z. Sun, Phys. Rev. B 62, 570 (2000).
119. I. N. Krivorotov, D. V. Berkov, N. L. Gorn, N. C. Emley, J. C. Sankey, D. C. Ralph and R. A. Buhrman, Phys. Rev. B 76, 024418 (2007).
120. P. M. Braganca, I. N. Krivorotov, O. Ozatay, A. G. F. Garcia, N. C. Emley, J. C. Sankey, D. C. Ralph and R. A. Buhrman, Phys. Rev. B 77, 144423 (2008).
121. J. C. Slonczewski, J. Magn. & Magn. Mater. 195, L261 (1999).
122. R. H. Koch, J. A. Katine and J. Z. Sun, Phys. Rev. Lett. 92(8), 088302 (2004).
123. M. Hosomi, H. Yamagishi, T. Yamamoto, et al., IEDM Technical Digest, 459 (2005).
124. T. Aoki, Y. Ando, D. Watanabe, M. Oogane and T. Miyazaki, J. Appl. Phys. 103, 103911 (2008).
125. K. Yagame, M. Hosomi, I. Olmori, T. Yamamoto, Y. Higo, Y. Oishi and H. Kano, J. Appl. Phys. 97, 10C707 (2005).
126. Y. Higo, K. Yamane, K. Ohba, H. Narisawa, K. Bessho, M. Hosomi and H. Kano, Appl. Phys. Lett. 87, 082502 (2005).
127. T. Inokuchi, H. Sugiuama, Y. Saito and K. Inomata, Appl. Phys. Lett. 89, 102502 (2006).
128. T. Min, Q. Chen, T. Torng, C. Horng, D. Tang and P. Wang, J. Appl. Phys. 105, 07C931 (2009).
129. J. Das, R. Degraeve, P. Roussel, G. Groeseneken, G. Borghs and J. De Boeck, J. Appl. Phys. 91(10), 7712 (2002).
130. S. Bae, J. H. Judy, I. -F. Tsu and M. Davis, J. Appl. Phys. 94(12), 7636 (2003).
131. J. Akerman, P. Brown, M. DeHerrera et al., IEEE Trans., Device & Materials Reliability 4(3), 428 (2004).
132. S. C. Li, J. -M. Lee, M. -F. Shu, J. P. Su and T. -H. Wu, IEEE Trans, Magnetics41(2), 899 (2005).
133. J. G. Simmons, J. Appl. Phys. 34, 1793 (1963).
134. G. Landry, Y. Dong, J. Du, X. Xiang and J. Q. Xiao, Appl. Phys. Lett. 78(4), 501 (2001).
135. P. Padhan, P. LeClair, A. Gupta, K. Tsunekawa and D. D. Djayaprawira, Appl. Phys. Lett. 90, 142105 (2007).
136. R. Beach, T. Min, C. Horng et al., IEDM Technical Digest (2008), paper 12.5.
137. M. P. Sharrock, J. Appl. Phys. 76 (10), 6413 (1994).
138. H. Meng and J. P. Wang, Appl. Phys. Lett. 89, 152509 (2006).
139. Y. Huai and P. Nguyen “Magnetic element utilizing spin transfer and MRAM devices using the magnetic element,” US Patent 6,714,444 (2004).
140. Z. Diao, A. Panchula, Y. Ding et al., Appl. Phys. Lett. 90, 132508 (2007).
141. T. Kishi, H. Yoda, T. Kai, et al., I DM Technical Digest EDM Technical Digest (2008), paper 12.6.
142. M. Hagiudaa, S. Mitania, T. Sekia, K. Yakushijia, T. Shimab and K. Takanashia, J. Magn. & Magn. Mater. 310(2), 1905 (2007).
143. T. Nagase, K. Nishiyama, M. Nakayama, N. Shimomura, M. Amano, T. Kishi and H. Yoda, APS March Meeting, New Orleans, March 10-14 (2008).
144. M. Nakayama, T. Kai, N. Shimomura et al., J. Appl. Phys. 103, 07A710 (2008).
145. H. Yoda, T. Kishi, T. Nagase et al., Intermag 2008 Digest, FA-04 (2008).
146. M. Yoshikawa, T. Kai, M. Amano, et al., Intermag 2008 Digest, AC-01 (2008).
147. A. Kent, and D. Stein, “High speed low power annular magnetic devices based on current induced spin-momentum transfer,” US Patent 7,307,876 (2007).
148. J. Stohr, Ultrafast Magnetic Switching of Nanoelements with Spin Currents, http://www.ssrl.slac.stanford.edu/stohr/spininjection.htm (2007).
149. J. P. Strachan, V. Chembrolu, Y. Acremann et al., Phys. Rev. Lett. 100, 247201 (2008).
150. D. R. Baselt, G. U. Lee, M. Natesan, S. W. Metzger, P. E. Sheehan and R. J. Colton, Biosensors & Bioelectron. 13, 731 (1998).
151. C. R. Tamanaha, S. P. Mulvaney, J. C. Rife and L. J. Whitman, Biosensors & Bioelectron., doi:10.1016/j.bios.2008.02.009 (2008).
152. S. J. Osterfelda, H. Yub, R. S. Gaster et al., Proc. Natl Acad. Sci. 105(52), 20637 (2008).
153. N. Sakimura, H. Honjo, S. Saito et al., IEEE Digest of Technical Papers, ISSCC (2009), paper 27.4.
154. Y. Iwata, K. Tsuchida, T. Inaba et al., IEEE Digest of Technical Papers, ISSCC (2006), p. 138.
155. N. Sakimura, T. Sugibayashi, T. Honda et al., IEEE J. Solid-State Circ. 42(4), (2007).
156. N. Sakimura, T. Sugibayashi, R. Nebashi and N. Kasai, IEEE 2008 Custom Integrated Circuit Conference (CICC) September 21-24 (2008), paper 14-4,. 325.
157. N. Bruchon, L. Torres, G. Sassatelli and G. Cambon, IEEE Proceedings of the 2006 Emerging VLSI Technologies and Architectures (ISVLSI'06), Karlsruhe, Germany, March 2-3 (2006).
158. K. Pagiamtzis and A. Sheikholeslami, IEEE J. Solid-State Circ. 41(3), 712 (2006).