Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers

Applied Physics Letters

Volumn 89, Issue 6, 2006, Pages

  Fukumoto, Yoshiyuki ^a   Suzuki, Tetsuhiro ^a   Tahara, Shuichi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC FIELD EFFECTS; MAGNETIZATION; NICKEL COMPOUNDS; RANDOM ACCESS STORAGE;

FERROMAGNETIC COUPLING LAYERS (FCL); LAYERED STRUCTURES; SOFT MAGNETIC LAYERS; SYNTHETIC ANTIFERROMAGNETS;

SOFT MAGNETIC MATERIALS;

EID: 33747111005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335810     Document Type: Article

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