Thermal activation effect on spin transfer switching in magnetic tunnel junctions

Applied Physics Letters

Volumn 87, Issue 8, 2005, Pages

  Higo, Y ^a   Yamane, K ^a   Ohba, K ^a   Narisawa, H ^a   Bessho, K ^a   Hosomi, M ^a   Kano, H ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC TUNNEL JUNCTIONS (MTJS); SPIN TRANSFER SWITCHING; THERMAL ACTIVATION EFFECT; TUNNEL BARRIER BREAKDOWN;

CURRENT DENSITY; ELECTRIC CURRENTS; MAGNETIC SEMICONDUCTORS; PHASE DIAGRAMS; SWITCHING; TORQUE;

TUNNEL JUNCTIONS;

EID: 24344483936     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2011795     Document Type: Article

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