Edge domain dependent pinning effect by stray field in patterned magnetic tunnel junction

IEEE Transactions on Magnetics

Volumn 41, Issue 10, 2005, Pages 2652-2654

  Shimomura, Naoharu ^a,b   Kishi, Tatsuya ^a,b   Yoshikawa, Masatoshi ^a,b   Kitagawa, Eiji ^a,b   Asao, Yoshiaki ^a,b   Hada, Hiromitsu ^b   Yoda, Hiroaki ^a,b   Tahara, Shuichi ^a,b  

^a TOSHIBA CORPORATION   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Magnetic tunnel junction (MTJ); Magnetoresistance ratio (MR); Magnetoresistive random access memory (MRAM)

Indexed keywords

MAGNETIC DOMAINS; MAGNETIZATION; MAGNETORESISTANCE; NONLINEAR EQUATIONS;

MAGNETIC TUNNEL JUNCTION (MTJ); MAGNETORESISTANCE RATIO (MR); MAGNETORESISTIVE RAM (MRAM);

TUNNEL JUNCTIONS;

EID: 27744538802     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2005.854938     Document Type: Article

References (6)

1. J. DeBrosse et al, "A 16 Mb MRAM featuring bootstrapped write drivers," in Symp. VLSI Circuits Dig. Tech. Papers, 2004, p. 454.
2. A. F. Popcov, L. L. Savchenko, N. V. Vorotnikova, S. Tehrani, and J. Shi, "Edge pinning effect in single- and three-layer patterns," Appl. Phys. Lett., vol. 77, p. 277, 2000.
3. J. Shi and S. Tehrani, "Edge-pinned states in patterned submicron NiFeCo structures," Appl. Phys. Lett., vol. 77, p. 1692, 2000.
4. J.-G. Zhu and Y. Zheng, "The micromagnetics of magnetoresistive random access memory," in Spin Dynamics in Confined Magnetic Structures 1, B. Hilebrands and K. Ounadjela, Eds. New York: Springer-Verlag, 2001, pp. 289-325.
5. X. Portier and A. K. Petford-Long, "The formation of 360 domain walls in magnetic tunnel junction elements," Appl. Phys. Lett., vol. 76, p. 754, 2000.
6. Y. Zheng and J.-G. Zhu, "Switching field variation in patterned submicron magnetic film elements," J. Appl. Phys., vol. 81, p. 5471, 1997.