Area scaling and voltage dependence of time-to-breakdown in magnetic tunnel junctions

Journal of Applied Physics

Volumn 91, Issue 10, 2002, Pages 7712-7714

  Das, J ^a   Degraeve, R ^a   Roussel, P ^a   Groeseneken, G ^a   Borghs, G ^a   Boeck, J De ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AREA SCALING; BREAKDOWN SITES; CONSTANT VOLTAGE STRESS TESTS; FAILURE MECHANISM; LINEAR DEPENDENCE; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC TUNNEL JUNCTION; NO TAIL; RANDOMLY DISTRIBUTED; STRESS VOLTAGES; ULTRA-THIN; VOLTAGE DEPENDENCE; WEIBULL; WEIBULL SLOPE;

MAGNETIC DEVICES; MAGNETIC STORAGE; WEIBULL DISTRIBUTION;

LEAKAGE CURRENTS;

EID: 0037094617     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1447180     Document Type: Article

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