Estimation of thermal durability and intrinsic critical currents of magnetization switching for spin-transfer based magnetic random access memory

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Yagami, K ^a   Tulapurkar, A A ^b   Fukushima, A ^b   Suzuki, Y ^b,c  

^a SONY CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNET CELLS; SPIN-TRANSFER EFFECTS; THERMAL DURABILITY; THERMAL SWITCHING;

DURABILITY; ELECTRON BEAM LITHOGRAPHY; GIANT MAGNETORESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETIZATION; RANDOM ACCESS STORAGE; SPUTTERING; SWITCHING;

CRITICAL CURRENTS;

EID: 20944451154     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851912     Document Type: Conference Paper

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