Study of dielectric breakdown distributions in magnetic tunneling junction with MgO barrier

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Chen, Q ^a   Min, T ^a   Torng, T ^a   Horng, C ^a   Tang, D ^a   Wang, P ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POLARITIES; DIELECTRIC BREAKDOWNS; FILM PROPERTIES; MAGNETIC TUNNEL JUNCTIONS; MAGNETIC TUNNELING JUNCTIONS; MGO BARRIERS; PEAK-TO-PEAK SEPARATIONS; PROCESS CONDITIONS; PROCESS OPTIMIZATIONS; SPIN TORQUES; STRESS CONDITIONS; SWITCHING VOLTAGES;

SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS; WAVEGUIDE JUNCTIONS;

MAGNETIC DEVICES;

EID: 65249155005     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3074508     Document Type: Article

References (12)

1. J. C. Slonczewski, J. Magn. Magn. Mater. 0304-8853 10.1016/0304-8853(96) 00062-5 159, L1 (1996).
2. L. Berger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.54.9353 54, 9353 (1996).
3. P. -K. Wong, IEEE Trans. Magn. 42, 232 2006. 0304-8853
4. B. Oliver, J. Appl. Phys. 0021-8979 10.1063/1.1636255 95, 1315 (2004).
5. A. Khan, J. Appl. Phys. 0021-8979 10.1063/1.2939571 103, 123705 (2008).
6. S. Assefa, J. Appl. Phys. 0021-8979 10.1063/1.2781321 102, 063901 (2007).
7. K. Kim, J. Appl. Phys. 0021-8979 10.1063/1.2176916 99, 08K705, 2006.
8. C. Miller, Phys. Rev. B 0163-1829 10.1103/PhysRevB.74.212404 74, 212404 (2006).
9. B. Beach, Tech. Dig.-Int. Electron Devices Meet. (to be published). 0163-1829
10. W. Oepts, J. Appl. Phys. 0021-8979 10.1063/1.371300 86, 3863 (1999).
11. J. Ventura, Phys. Rev. B 0163-1829 10.1103/PhysRevB.78.024403 78, 024403 (2008).
12. S. Pinitsoontorn, " J. Appl. Phys. (these proceedings), Abstract No. AD-01.