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Volumn , Issue , 2004, Pages 583-586

Improvement of robustness against write disturbance by novel cell design for high density MRAM

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; COERCIVE FORCE; COMPUTER SIMULATION; MAGNETORESISTANCE; ROBUSTNESS (CONTROL SYSTEMS); SWITCHING SYSTEMS; MAGNETIC RECORDING;

EID: 21644470174     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (18)

References (4)
  • 1
    • 17644447010 scopus 로고    scopus 로고
    • A 0.18μm 4Mb toggling MRAM
    • M. Durlam, et al., "A 0.18μm 4Mb Toggling MRAM", IEDM Tech. Dig., pp.995-997, 2003
    • (2003) IEDM Tech. Dig. , pp. 995-997
    • Durlam, M.1
  • 2
    • 4544278338 scopus 로고    scopus 로고
    • A study for 0.18μm high-density MRAM
    • M. Motoyoshi, et al., "A study for 0.18μm High-Density MRAM", Symp. on VLSI Tech. Dig., pp. 22-23, 2004
    • (2004) Symp. on VLSI Tech. Dig. , pp. 22-23
    • Motoyoshi, M.1
  • 3
    • 21644432285 scopus 로고    scopus 로고
    • Japanese patent, P2004-128067
    • T. Kai, et al., Japanese patent, P2004-128067
    • Kai, T.1
  • 4
    • 21644447370 scopus 로고    scopus 로고
    • Write data issues for making functional 256kb MRAM parts
    • GE-01
    • K. Ounadjela, et al., "Write Data Issues For Making Functional 256kb MRAM Parts", 9th Joint MMM/Intermag Conference, GE-01, 2004
    • (2004) 9th Joint MMM/Intermag Conference
    • Ounadjela, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.