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Volumn , Issue , 2004, Pages 583-586
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Improvement of robustness against write disturbance by novel cell design for high density MRAM
a a a a a a a a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
BIT ERROR RATE;
COERCIVE FORCE;
COMPUTER SIMULATION;
MAGNETORESISTANCE;
ROBUSTNESS (CONTROL SYSTEMS);
SWITCHING SYSTEMS;
MAGNETIC RECORDING;
ASTROID;
AXIS COERCIVITY;
MAGNETORESISTIVE RANDOM ACESS MEMORY (MRAM);
SWITCHING FIELD DISTRIBUTION (SFD);
RANDOM ACCESS STORAGE;
MRAM DEVICES;
ASTROID;
BIT CELL;
CELL DESIGN;
SWITCHING MECHANISM;
WRITE DISTURBANCES;
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EID: 21644470174
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (18)
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References (4)
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