Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Honjo, H ^a   Nebashi, R ^a   Suzuki, T ^a   Fukami, S ^a   Ishiwata, N ^a   Sugibayashi, T ^a   Kasai, N ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; MAGNETIC MATERIALS; MAGNETORESISTANCE; RANDOM ACCESS STORAGE;

LOW-WRITE CURRENT; RANDOM ACCESS MEMORY CELL;

TUNNEL JUNCTIONS;

EID: 42149093760     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2839288     Document Type: Article

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