Magnetoresistive random access memory operation error by thermally activated reversal (invited)

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Yamamoto, Tetsuya ^a   Kano, Hiroshi ^a   Higo, Yutaka ^a   Ohba, Kazuhiro ^a   Mizuguchi, Tetsuya ^a   Hosomi, Masanori ^a   Bessho, Kazuhiro ^a   Hashimoto, Minoru ^a   Ohmori, Hiroyuki ^a   Sone, Takeyuki ^a   Endo, Keitaro ^a   Kubo, Shinya ^a   Narisawa, Hiroaki ^a   Otsuka, Wataru ^a   Okazaki, Nobumichi ^a   Motoyoshi, Makoto ^a   Nagao, Hajime ^a   Sagara, Tsutomu ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYSTERESIS LOOP; MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); THERMAL ACTIVATION; THERMAL FLUCTUATION;

BIT ERROR RATE; DYNAMIC RANDOM ACCESS STORAGE; MAGNETIC DOMAINS; MAGNETIC HYSTERESIS; MAGNETIZATION; MAGNETORESISTANCE; OPTIMIZATION; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

RANDOM ACCESS STORAGE;

EID: 21044442880     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851879     Document Type: Conference Paper

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