Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 188-189

  Suzuki, T ^a   Fukumoto, Y ^a   Mori, K ^a   Honjo, H ^a   Nebashi, R ^a   Miura, S ^a   Nagahara, K ^a   Saito, S ^a   Numata, H ^a   Tsuji, K ^a   Sugibayashi, T ^a   Hada, H ^a   Ishiwata, N ^a   Asao, Y ^b   Ikegawa, S ^b   Yoda, H ^b   Tahara, S ^a  

^a NEC CORPORATION   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; ELECTRIC CURRENTS; FERROMAGNETISM; MAGNETORESISTANCE; SWITCHING; SYSTEM STABILITY; THERMODYNAMIC STABILITY;

LOW SWITCHING CURRENT; MRAM SCALABILITY; SPIN FLOP FIELDS; TOGGLE CELLS;

RANDOM ACCESS STORAGE;

EID: 33745174518     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469262     Document Type: Conference Paper

References (3)

1. M. Durlam et al., IEDM Tech. Dig., pp. 995-997, 2003
2. H. Fujiwara, et al., Trans. Magn. Soc. Japan,4, pp. 121-129, 2004
3. D. C. Worledge, Appl. Phys. Lett. Vol. 84, pp. 4559-4561, 2004