Improvement of writing margin in MRAM with novel shape

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Oh, S C ^a   Lee, J E ^a   Kim, H J ^a   Ha, Y K ^a   Bae, J S ^a   Nam, K T ^a   Kim, E S ^a   Park, S O ^a   Kim, H S ^a   Chung, U In ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC MASS; MAGNETIC RANDOM ACCESS MEMORY (MRAM); MICROMAGNETIC SIMULATIONS; SWITCHING FIELD DISTRIBUTION (SFD);

ASPECT RATIO; MAGNETIC FIELDS; MAGNETIC STORAGE; MAGNETIZATION; PHOTOLITHOGRAPHY; RANDOM ACCESS STORAGE; REMANENCE;

MAGNETIC HEADS;

EID: 20944432550     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861433     Document Type: Article

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