Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Ohmori, Hideto ^a   Hatori, Tomoya ^a   Nakagawa, Shigeki ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNESIUM COMPOUNDS; MAGNETORESISTANCE; RARE EARTHS; THIN FILMS;

CRYSTALLINE ORIENTATION; TUNNELING BARRIER LAYER;

TUNNEL JUNCTIONS;

EID: 42149099347     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2840016     Document Type: Article

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