High pressure processing of hydrogenated amorphous silicon solar cells: Relation between nanostructure and high open-circuit voltage

Applied Physics Letters

Volumn 106, Issue 4, 2015, Pages

  Fischer, Marinus ^a   Tan, Hairen ^a   Melskens, Jimmy ^a   Vasudevan, Ravi ^a   Zeman, Miro ^a   Smets, Arno H M ^a  

^a Department of Microelectronics   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HYDROGENATION; NANOSTRUCTURES; OPEN CIRCUIT VOLTAGE; SILICON; SILICON SOLAR CELLS;

A-SI:H SOLAR CELLS; ABSORBER LAYERS; HIGH BANDGAP; HIGH PRESSURE; HIGH PRESSURE PROCESSING; HYDROGENATED AMORPHOUS SILICON (A-SI:H); NANOSIZED VOIDS; SINGLE JUNCTION;

AMORPHOUS SILICON;

EID: 84923873502     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4907316     Document Type: Article

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