The relation between the bandgap and the anisotropic nature of hydrogenated amorphous silicon

IEEE Journal of Photovoltaics

Volumn 2, Issue 2, 2012, Pages 94-98

  Smets, Arno H M ^a   Wank, Michael A ^a   Vet, Bas ^a   Fischer, Marinus ^a   Van Swaaij, Rene A C M M ^a   Zeman, Miro ^a   Bobela, David C ^b   Wronski, Christopher R ^c   Van De Sanden, Richard M C M ^d  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Amorphous silicon; bandgap; microstructure; thin film

Indexed keywords

A-SI:H; CRYSTALLINE LATTICE; DIVACANCIES; HYDROGENATED AMORPHOUS SILICON (A-SI:H); NANOSIZED VOIDS; PROCESSING TECHNIQUE; SILICON MATRIX; VOLUMETRIC COMPRESSIONS;

AMORPHOUS SILICON; ANISOTROPY; BOND LENGTH; ENERGY GAP; HYDROGENATION; METALLIC FILMS; MICROSTRUCTURE; THIN FILMS;

SILICON;

EID: 84865195574     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2180701     Document Type: Article

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