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Volumn 114, Issue 15, 2013, Pages

Comparison of amorphous silicon absorber materials: Light-induced degradation and solar cell efficiency

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON (A-SI:H); DEPOSITION CONDITIONS; DEPOSITION PARAMETERS; LIGHT-INDUCED DEGRADATION; SINGLE JUNCTION SOLAR CELLS; SOLAR CELL EFFICIENCIES; SOLAR CELL PERFORMANCE; TRIPLE JUNCTION SOLAR CELLS;

EID: 84886524027     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824813     Document Type: Article
Times cited : (56)

References (51)
  • 1
    • 21544455021 scopus 로고
    • Reversible conductivity changes in discharge-produced amorphous Si
    • 10.1063/1.89674
    • D. L. Staebler and C. R. Wronski, " Reversible conductivity changes in discharge-produced amorphous Si.," Appl. Phys. Lett. 31, 292-294 (1977). 10.1063/1.89674
    • (1977) Appl. Phys. Lett. , vol.31 , pp. 292-294
    • Staebler, D.L.1    Wronski, C.R.2
  • 2
    • 4344668571 scopus 로고    scopus 로고
    • Staebler-Wronski effect in hydrogenated amorphous silicon and related alloy films
    • 10.1143/JJAP.43.3257
    • T. Shimizu, " Staebler-Wronski effect in hydrogenated amorphous silicon and related alloy films.," Jpn. J. Appl. Phys., Part 1 43, 3257-3268 (2004). 10.1143/JJAP.43.3257
    • (2004) Jpn. J. Appl. Phys., Part 1 , vol.43 , pp. 3257-3268
    • Shimizu, T.1
  • 3
    • 39249084116 scopus 로고    scopus 로고
    • Hydrogen above saturation at silicon vacancies: H-pair reservoirs and metastability sites
    • 10.1103/PhysRevLett.87.105503
    • S. Zhang and H. Branz, " Hydrogen above saturation at silicon vacancies: H-pair reservoirs and metastability sites.," Phys. Rev. Lett. 87, 105503 (2001). 10.1103/PhysRevLett.87.105503
    • (2001) Phys. Rev. Lett. , vol.87 , pp. 105503
    • Zhang, S.1    Branz, H.2
  • 4
    • 0037429946 scopus 로고    scopus 로고
    • Vacancies and voids in hydrogenated amorphous silicon
    • 10.1063/1.1559657
    • A. H. M. Smets, W. M. M. Kessels, and M. C. M. van de Sanden, " Vacancies and voids in hydrogenated amorphous silicon.," Appl. Phys. Lett. 82, 1547-1549 (2003). 10.1063/1.1559657
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 1547-1549
    • Smets, A.H.M.1    Kessels, W.M.M.2    Van De Sanden, M.C.M.3
  • 5
    • 78650395481 scopus 로고    scopus 로고
    • The Staebler-Wronski effect: New physical approaches and insights as a route to reveal its origin
    • San Francisco, CA (Materials Research Society). 10.1557/PROC-1245-A14-02
    • A. Smets, C. Wronski, M. Zeman, and M. van de Sanden, " The Staebler-Wronski effect: New physical approaches and insights as a route to reveal its origin.," Mater. Res. Soc. Symp. Proc., San Francisco, CA (Materials Research Society, 2010), Vol. 1245, p. 1245-A14-02. 10.1557/PROC-1245-A14-02
    • (2010) Mater. Res. Soc. Symp. Proc. , vol.1245
    • Smets, A.1    Wronski, C.2    Zeman, M.3    Van De Sanden, M.4
  • 7
    • 10044248759 scopus 로고    scopus 로고
    • Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique
    • 10.1016/j.solener.2004.08.026
    • J. Meier, U. Kroll, E. Vallat-Sauvain, J. Spitznagel, U. Graf, and A. Shah, " Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique.," Sol. Energy 77, 983-993 (2004). 10.1016/j.solener.2004.08.026
    • (2004) Sol. Energy , vol.77 , pp. 983-993
    • Meier, J.1    Kroll, U.2    Vallat-Sauvain, E.3    Spitznagel, J.4    Graf, U.5    Shah, A.6
  • 8
    • 0037769611 scopus 로고    scopus 로고
    • Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry
    • 10.1016/S0927-0248(02)00436-1
    • R. Collins, A. Ferlauto, G. Ferreira, C. Chen, J. Koh, R. Koval, Y. Lee, J. Pearce, and C. Wronski, " Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry.," Sol. Energy Mater. Sol. Cells 78, 143-180 (2003). 10.1016/S0927-0248(02)00436-1
    • (2003) Sol. Energy Mater. Sol. Cells , vol.78 , pp. 143-180
    • Collins, R.1    Ferlauto, A.2    Ferreira, G.3    Chen, C.4    Koh, J.5    Koval, R.6    Lee, Y.7    Pearce, J.8    Wronski, C.9
  • 9
    • 0042012922 scopus 로고    scopus 로고
    • Effect of hydrogen dilution on the open-circuit voltage of hydrogenated amorphous silicon solar cells
    • 10.1063/1.1595153
    • B. Yan, J. Yang, and S. Guha, " Effect of hydrogen dilution on the open-circuit voltage of hydrogenated amorphous silicon solar cells.," Appl. Phys. Lett. 83, 782-784 (2003). 10.1063/1.1595153
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 782-784
    • Yan, B.1    Yang, J.2    Guha, S.3
  • 10
    • 59949093967 scopus 로고    scopus 로고
    • Growth mechanism of nanocrystalline silicon at the phase transition and its application in thin film solar cells
    • 10.1016/j.jcrysgro.2008.09.155
    • R. Schropp, J. Rath, and H. Li, " Growth mechanism of nanocrystalline silicon at the phase transition and its application in thin film solar cells.," J. Cryst. Growth 311, 760-764 (2009). 10.1016/j.jcrysgro. 2008.09.155
    • (2009) J. Cryst. Growth , vol.311 , pp. 760-764
    • Schropp, R.1    Rath, J.2    Li, H.3
  • 11
    • 0036467816 scopus 로고    scopus 로고
    • Growth and optoelectronic properties of polymorphous silicon thin films
    • 10.1016/S0040-6090(01)01656-X
    • P. Roca i Cabarrocas, A. Fontcuberta i Morral, and Y. Poissant, " Growth and optoelectronic properties of polymorphous silicon thin films.," Thin Solid Films 403-404, 39-46 (2002). 10.1016/S0040-6090(01)01656-X
    • (2002) Thin Solid Films , vol.403-404 , pp. 39-46
    • Roca Cabarrocas, I.P.1    Fontcuberta Morral, I.A.2    Poissant, Y.3
  • 12
    • 2342468721 scopus 로고    scopus 로고
    • Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements
    • 10.1103/PhysRevB.69.125307
    • A. Fontcuberta i Morral and P. Roca i Cabarrocas, " Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements.," Phys. Rev. B 69, 125307 (2004). 10.1103/PhysRevB.69.125307
    • (2004) Phys. Rev. B , vol.69 , pp. 125307
    • Fontcuberta Morral, I.A.1    Roca Cabarrocas, I.P.2
  • 13
    • 0035254387 scopus 로고    scopus 로고
    • Amorphous and microcrystalline silicon solar cells prepared at high deposition rates using RF (13.56 MHz) plasma excitation frequencies
    • 10.1016/S0927-0248(00)00183-5
    • B. Rech, T. Roschek, J. Müller, S. Wieder, and H. Wagner, " Amorphous and microcrystalline silicon solar cells prepared at high deposition rates using RF (13.56 MHz) plasma excitation frequencies.," Sol. Energy Mater. Sol. Cells 66, 267-273 (2001). 10.1016/S0927-0248(00)00183-5
    • (2001) Sol. Energy Mater. Sol. Cells , vol.66 , pp. 267-273
    • Rech, B.1    Roschek, T.2    Müller, J.3    Wieder, S.4    Wagner, H.5
  • 14
    • 84886577587 scopus 로고    scopus 로고
    • Degradation kinetics of amorphous silicon solar cells processed at high pressure and its relation to the nanostructure
    • Tampa, FL
    • M. Fischer, R. J. V. Quax, M. Zeman, and A. H. M. Smets, " Degradation kinetics of amorphous silicon solar cells processed at high pressure and its relation to the nanostructure.," IEEE Photovoltaic Specialists Conference Proceedings, Tampa, FL, 2013.
    • (2013) IEEE Photovoltaic Specialists Conference Proceedings
    • Fischer, M.1    Quax, R.J.V.2    Zeman, M.3    Smets, A.H.M.4
  • 15
    • 13744253789 scopus 로고    scopus 로고
    • Thin-film silicon - Growth process and solar cell application
    • 10.1143/JJAP.43.7909
    • A. Matsuda, " Thin-film silicon-growth process and solar cell application.," Jpn. J. Appl. Phys., Part 1 43, 7909-7920 (2004). 10.1143/JJAP.43.7909
    • (2004) Jpn. J. Appl. Phys., Part 1 , vol.43 , pp. 7909-7920
    • Matsuda, A.1
  • 16
    • 13744260705 scopus 로고    scopus 로고
    • A highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network
    • 10.1063/1.1846132
    • S. Shimizu, M. Kondo, and A. Matsuda, " A highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network.," J. Appl. Phys. 97, 033522 (2005). 10.1063/1.1846132
    • (2005) J. Appl. Phys. , vol.97 , pp. 033522
    • Shimizu, S.1    Kondo, M.2    Matsuda, A.3
  • 17
    • 36749116885 scopus 로고
    • Amorphous silicon p-i-n solar cells fabricated by reactive sputtering
    • 10.1063/1.93162
    • T. Moustakas and R. Friedman, " Amorphous silicon p-i-n solar cells fabricated by reactive sputtering.," Appl. Phys. Lett. 40, 515-517 (1982). 10.1063/1.93162
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 515-517
    • Moustakas, T.1    Friedman, R.2
  • 18
    • 0035800979 scopus 로고    scopus 로고
    • Current status of the thermo-catalytic (hot-wire) CVD of thin silicon films for photovoltaic applications
    • 10.1016/S0040-6090(01)01277-9
    • B. Schroeder, U. Weber, H. Seitz, A. Ledermann, and C. Mukherjee, " Current status of the thermo-catalytic (hot-wire) CVD of thin silicon films for photovoltaic applications.," Thin Solid Films 395, 298-304 (2001). 10.1016/S0040-6090(01)01277-9
    • (2001) Thin Solid Films , vol.395 , pp. 298-304
    • Schroeder, B.1    Weber, U.2    Seitz, H.3    Ledermann, A.4    Mukherjee, C.5
  • 19
    • 42649094159 scopus 로고    scopus 로고
    • Hydrogenated amorphous and nanocrystalline silicon solar cells deposited by HWCVD and RF-PECVD on plastic substrates at 150 °c
    • 10.1016/j.jnoncrysol.2007.09.030
    • S. Filonovich, P. Alpuim, L. Rebouta, J.-E. Bourée, and Y. Soro, " Hydrogenated amorphous and nanocrystalline silicon solar cells deposited by HWCVD and RF-PECVD on plastic substrates at 150 °C.," J. Non-Cryst. Solids 354, 2376-2380 (2008). 10.1016/j.jnoncrysol.2007.09.030
    • (2008) J. Non-Cryst. Solids , vol.354 , pp. 2376-2380
    • Filonovich, S.1    Alpuim, P.2    Rebouta, L.3    Bourée, J.-E.4    Soro, Y.5
  • 20
    • 0036948509 scopus 로고    scopus 로고
    • Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma
    • New Orleans, LA (IEEE)
    • B. Korevaar, A. Petit, C. Smit, R. van Swaaij, and M. van de Sanden, " Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma.," in IEEE Photovoltaic Specialists Conference, New Orleans, LA (IEEE, 2002), pp. 1230-1233.
    • (2002) IEEE Photovoltaic Specialists Conference , pp. 1230-1233
    • Korevaar, B.1    Petit, A.2    Smit, C.3    Van Swaaij, R.4    Van De Sanden, M.5
  • 21
    • 84886520254 scopus 로고    scopus 로고
    • INDEOtec SA (Switzerland)
    • See http://www.indeotec.com for more information about INDEOtec SA (Switzerland).
  • 22
    • 34548320048 scopus 로고    scopus 로고
    • Fast equilibration of silane/hydrogen plasmas in large area RF capacitive reactors monitored by optical emission spectroscopy
    • 10.1088/0963-0252/16/4/001
    • A. Howling, B. Strahm, P. Colsters, L. Sansonnens, and C. Hollenstein, " Fast equilibration of silane/hydrogen plasmas in large area RF capacitive reactors monitored by optical emission spectroscopy.," Plasma Sources Sci. Technol. 16, 679-696 (2007). 10.1088/0963-0252/16/4/001
    • (2007) Plasma Sources Sci. Technol. , vol.16 , pp. 679-696
    • Howling, A.1    Strahm, B.2    Colsters, P.3    Sansonnens, L.4    Hollenstein, C.5
  • 23
    • 42649085367 scopus 로고    scopus 로고
    • Relation between substrate surface morphology and microcrystalline silicon solar cell performance
    • 10.1016/j.jnoncrysol.2007.09.084
    • M. Python, E. Vallat-Sauvain, J. Bailat, D. Domin, L. Fesquet, A. Shah, and C. Ballif, " Relation between substrate surface morphology and microcrystalline silicon solar cell performance.," J. Non-Crystal. Solids 354, 2258-2262 (2008). 10.1016/j.jnoncrysol.2007.09.084
    • (2008) J. Non-Crystal. Solids , vol.354 , pp. 2258-2262
    • Python, M.1    Vallat-Sauvain, E.2    Bailat, J.3    Domin, D.4    Fesquet, L.5    Shah, A.6    Ballif, C.7
  • 24
    • 84862292550 scopus 로고    scopus 로고
    • Control of CVD-deposited ZnO films properties through water/DEZ ratio: Decoupling of electrode morphology and electrical characteristics
    • 10.1016/j.solmat.2012.05.016
    • S. Nicolay, M. Benkhaira, L. Ding, J. Escarre, G. Bugnon, F. Meillaud, and C. Ballif, " Control of CVD-deposited ZnO films properties through water/DEZ ratio: Decoupling of electrode morphology and electrical characteristics.," Sol. Energy Mater. Sol. Cells 105, 46-52 (2012). 10.1016/j.solmat.2012.05.016
    • (2012) Sol. Energy Mater. Sol. Cells , vol.105 , pp. 46-52
    • Nicolay, S.1    Benkhaira, M.2    Ding, L.3    Escarre, J.4    Bugnon, G.5    Meillaud, F.6    Ballif, C.7
  • 26
    • 78649539042 scopus 로고    scopus 로고
    • Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells
    • 10.1063/1.3517492
    • P. Cuony, M. Marending, D. Alexander, M. Boccard, G. Bugnon, M. Despeisse, and C. Ballif, " Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells.," Appl. Phys. Lett. 97, 213502 (2010). 10.1063/1.3517492
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 213502
    • Cuony, P.1    Marending, M.2    Alexander, D.3    Boccard, M.4    Bugnon, G.5    Despeisse, M.6    Ballif, C.7
  • 27
    • 77249132337 scopus 로고    scopus 로고
    • Resistive interlayer for improved performance of thin film silicon solar cells on highly textured substrate
    • 10.1063/1.3324704
    • M. Despeisse, G. Bugnon, A. Feltrin, M. Stueckelberger, P. Cuony, F. Meillaud, A. Billet, and C. Ballif, " Resistive interlayer for improved performance of thin film silicon solar cells on highly textured substrate.," Appl. Phys. Lett. 96, 073507 (2010). 10.1063/1.3324704
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 073507
    • Despeisse, M.1    Bugnon, G.2    Feltrin, A.3    Stueckelberger, M.4    Cuony, P.5    Meillaud, F.6    Billet, A.7    Ballif, C.8
  • 32
    • 0032494909 scopus 로고    scopus 로고
    • Rf breakdown of low-pressure gas and a novel method for determination of electron-drift velocities in gases
    • 10.1088/0022-3727/31/23/008
    • V. Lisovskiy and V. Yegorenkov, " Rf breakdown of low-pressure gas and a novel method for determination of electron-drift velocities in gases.," J. Phys. D: Appl. Phys. 31, 3349-3357 (1998). 10.1088/0022-3727/ 31/23/008
    • (1998) J. Phys. D: Appl. Phys. , vol.31 , pp. 3349-3357
    • Lisovskiy, V.1    Yegorenkov, V.2
  • 33
    • 0001932681 scopus 로고
    • The mathematical theory of electrical discharges in gases
    • 10.1103/RevModPhys.24.45
    • T. Kihara, " The mathematical theory of electrical discharges in gases.," Rev. Mod. Phys. 24, 45-61 (1952). 10.1103/RevModPhys.24.45
    • (1952) Rev. Mod. Phys. , vol.24 , pp. 45-61
    • Kihara, T.1
  • 35
    • 32144459839 scopus 로고    scopus 로고
    • Electron drift velocity in argon, nitrogen, hydrogen, oxygen and ammonia in strong electric fields determined from rf breakdown curves
    • 10.1088/0022-3727/39/4/011
    • V. Lisovskiy, J.-P. Booth, K. Landry, D. Douai, V. Cassagne, and V. Yegorenkov, " Electron drift velocity in argon, nitrogen, hydrogen, oxygen and ammonia in strong electric fields determined from rf breakdown curves.," J. Phys. D: Appl. Phys. 39, 660-665 (2006). 10.1088/0022-3727/39/ 4/011
    • (2006) J. Phys. D: Appl. Phys. , vol.39 , pp. 660-665
    • Lisovskiy, V.1    Booth, J.-P.2    Landry, K.3    Douai, D.4    Cassagne, V.5    Yegorenkov, V.6
  • 36
    • 34249291954 scopus 로고    scopus 로고
    • Electron drift velocity in silane in strong electric fields determined from rf breakdown curves
    • 10.1088/0022-3727/40/11/022
    • V. Lisovskiy, J.-P. Booth, K. Landry, D. Douai, V. Cassagne, and V. Yegorenkov, " Electron drift velocity in silane in strong electric fields determined from rf breakdown curves.," J. Phys. D: Appl. Phys. 40, 3408-3410 (2007). 10.1088/0022-3727/40/11/022
    • (2007) J. Phys. D: Appl. Phys. , vol.40 , pp. 3408-3410
    • Lisovskiy, V.1    Booth, J.-P.2    Landry, K.3    Douai, D.4    Cassagne, V.5    Yegorenkov, V.6
  • 38
    • 34547917297 scopus 로고    scopus 로고
    • Guiding principles for obtaining high-quality microcrystalline silicon at high growth rates using SiH4/H2 glow-discharge plasma
    • 10.1143/JJAP.46.3052
    • C. Niikura, N. Itagaki, and A. Matsuda, " Guiding principles for obtaining high-quality microcrystalline silicon at high growth rates using SiH4/H2 glow-discharge plasma.," Jpn. J. Appl. Phys., Part 1 46, 3052-3058 (2007). 10.1143/JJAP.46.3052
    • (2007) Jpn. J. Appl. Phys., Part 1 , vol.46 , pp. 3052-3058
    • Niikura, C.1    Itagaki, N.2    Matsuda, A.3
  • 39
    • 0001309382 scopus 로고
    • On the primary process in the plasmachemical and photochemical vapor deposition from silane. III. Mechanism of the radiative species Si(1P0) formation
    • 10.1063/1.457657
    • M. Tsuda, S. Oikawa, and K. Sato, " On the primary process in the plasmachemical and photochemical vapor deposition from silane. III. Mechanism of the radiative species Si(1P0) formation.," J. Chem. Phys. 91, 6822-6829 (1989). 10.1063/1.457657
    • (1989) J. Chem. Phys. , vol.91 , pp. 6822-6829
    • Tsuda, M.1    Oikawa, S.2    Sato, K.3
  • 40
    • 0027678223 scopus 로고
    • Modelling of the power dissipation and rovibrational heating and cooling in SiH4-H2 RF glow discharges
    • 10.1088/0022-3727/26/10/018
    • J. Perrin, " Modelling of the power dissipation and rovibrational heating and cooling in SiH4-H2 RF glow discharges.," J. Phys. D: Appl. Phys. 26, 1662-1679 (1993). 10.1088/0022-3727/26/10/018
    • (1993) J. Phys. D: Appl. Phys. , vol.26 , pp. 1662-1679
    • Perrin, J.1
  • 41
    • 0041800033 scopus 로고
    • Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films
    • 10.1063/1.348470
    • J. Andújar, E. Bertran, A. Canillas, J. Campmany, and J. Morenza, " Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films.," J. Appl. Phys. 69, 3757-3759 (1991). 10.1063/1.348470
    • (1991) J. Appl. Phys. , vol.69 , pp. 3757-3759
    • Andújar, J.1    Bertran, E.2    Canillas, A.3    Campmany, J.4    Morenza, J.5
  • 42
    • 0344751778 scopus 로고
    • Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
    • 10.1016/0022-3093(83)90284-3
    • A. Matsuda, " Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma.," J. Non-Crystal. Solids 59-60, 767-774 (1983). 10.1016/0022-3093(83)90284-3
    • (1983) J. Non-Crystal. Solids , vol.59-60 , pp. 767-774
    • Matsuda, A.1
  • 43
    • 21144476181 scopus 로고
    • Powder dynamics in very high frequency silane plasmas
    • 10.1116/1.578200
    • J. Dorier, C. Hollenstein, A. Howling, and U. Kroll, " Powder dynamics in very high frequency silane plasmas.," J. Vac. Sci. Technol. A 10, 1048-1052 (1992). 10.1116/1.578200
    • (1992) J. Vac. Sci. Technol. A , vol.10 , pp. 1048-1052
    • Dorier, J.1    Hollenstein, C.2    Howling, A.3    Kroll, U.4
  • 44
    • 0001524926 scopus 로고    scopus 로고
    • Parameterization of the optical functions of amorphous materials in the interband region
    • 10.1063/1.118064
    • G. Jellison and F. Modine, " Parameterization of the optical functions of amorphous materials in the interband region.," Appl. Phys. Lett. 69, 371 (1996). 10.1063/1.118064
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 371
    • Jellison, G.1    Modine, F.2
  • 45
    • 0037439882 scopus 로고    scopus 로고
    • Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties
    • 10.1063/1.1524707
    • B. Kalache, A. Kosarev, R. Vanderhaghen, and P. Roca i Cabarrocas, " Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties.," J. Appl. Phys. 93, 1262-1273 (2003). 10.1063/1.1524707
    • (2003) J. Appl. Phys. , vol.93 , pp. 1262-1273
    • Kalache, B.1    Kosarev, A.2    Vanderhaghen, R.3    Roca Cabarrocas, I.P.4
  • 46
    • 4243897447 scopus 로고
    • Photoelectron spectra of hydrogenated amorphous silicon
    • 10.1103/PhysRevLett.39.1576
    • B. von Roedern, L. Ley, and M. Cardona, " Photoelectron spectra of hydrogenated amorphous silicon.," Phys. Rev. Lett. 39, 1576-1580 (1977). 10.1103/PhysRevLett.39.1576
    • (1977) Phys. Rev. Lett. , vol.39 , pp. 1576-1580
    • Von Roedern, B.1    Ley, L.2    Cardona, M.3
  • 47
    • 3342924374 scopus 로고
    • Disorder and the optical-absorption edge of hydrogenated amorphous silicon
    • 10.1103/PhysRevLett.47.1480
    • G. Cody, T. Tiedje, B. Abeles, B. Brooks, and Y. Goldstein, " Disorder and the optical-absorption edge of hydrogenated amorphous silicon.," Phys. Rev. Lett. 47, 1480-1483 (1981). 10.1103/PhysRevLett.47. 1480
    • (1981) Phys. Rev. Lett. , vol.47 , pp. 1480-1483
    • Cody, G.1    Tiedje, T.2    Abeles, B.3    Brooks, B.4    Goldstein, Y.5
  • 49
    • 84860523592 scopus 로고    scopus 로고
    • High quality amorphous silicon layers for large area thin film PV applications
    • Valencia, Spain (WIP Wirtschaft und Infrastruktur GmbH Co Planungs-KG)
    • M. Fecioru-Morariu, B. Mereu, J. Kalas, J. Hoetzel, P. A. Losio, M. Kupich, O. Kluth, and T. Eisenhammer, " High quality amorphous silicon layers for large area thin film PV applications.," in 25th EU PVSEC/WCPEC-5 Proceedings, Valencia, Spain (WIP Wirtschaft und Infrastruktur GmbH Co Planungs-KG, 2010), pp. 2947-2950.
    • (2010) 25th EU PVSEC/WCPEC-5 Proceedings , pp. 2947-2950
    • Fecioru-Morariu, M.1    Mereu, B.2    Kalas, J.3    Hoetzel, J.4    Losio, P.A.5    Kupich, M.6    Kluth, O.7    Eisenhammer, T.8
  • 50
    • 0032620083 scopus 로고    scopus 로고
    • Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition
    • 10.1063/1.371292
    • P. Alpuim, V. Chu, and J. Conde, " Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition.," J. Appl. Phys. 86, 3812-3821 (1999). 10.1063/1.371292
    • (1999) J. Appl. Phys. , vol.86 , pp. 3812-3821
    • Alpuim, P.1    Chu, V.2    Conde, J.3
  • 51
    • 34548083071 scopus 로고    scopus 로고
    • Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment
    • 10.1103/PhysRevB.76.073202
    • A. H. M. Smets and M. C. M. van de Sanden, " Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment.," Phys. Rev. B 76, 073202 (2007). 10.1103/PhysRevB.76.073202
    • (2007) Phys. Rev. B , vol.76 , pp. 073202
    • Smets, A.H.M.1    Van De Sanden, M.C.M.2


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