Low temperature deposition of high open-circuit voltage (>1.0 V) pin type amorphous silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 95, Issue 7, 2011, Pages 1922-1926

  Ni, Jian ^a   Zhang, Jianjun ^a   Cao, Yu ^a   Wang, Xianbao ^a   Chen, Xinliang ^a   Geng, Xinhua ^a   Zhao, Ying ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

Amorphous silicon; Low temperature; Open circuit voltage; PET; Solar cell

Indexed keywords

A-SI:H; A-SIC:H; HIGH CONDUCTIVITY; HIGH QUALITY; HYDROGEN DILUTION RATIO; HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED AMORPHOUS SILICON CARBIDE; LOW POWER; LOW SUBSTRATE TEMPERATURE; LOW TEMPERATURE; LOW TEMPERATURES; LOW-TEMPERATURE DEPOSITION; OPTICAL AND ELECTRICAL PROPERTIES; P-TYPE; PET; PET SUBSTRATE; PLASTIC SUBSTRATES; RADIO FREQUENCY PLASMA; RF-PECVD; SINGLE JUNCTION; WIDE BAND GAP; WINDOW LAYER;

ELECTRIC PROPERTIES; ENERGY GAP; ETHYLENE; HYDROGENATION; OPEN CIRCUIT VOLTAGE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYETHYLENE TEREPHTHALATES; SILICON CARBIDE; SOLAR CELLS; SUBSTRATES;

AMORPHOUS SILICON;

EID: 79955476668     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.02.021     Document Type: Article

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