High open-circuit voltage (1.04 V) n-i-p type thin film silicon solar cell by two-phase silicon carbide intrinsic material

Solar Energy Materials and Solar Cells

Volumn 130, Issue , 2014, Pages 561-566

  Ma, Jun ^a   Ni, Jian ^a   Zhang, Jianjun ^a   Liu, Qun ^a   Chen, Xinliang ^a   Zhang, Dekun ^a   Zhang, Xiaodan ^a   Zhao, Ying ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

Medium range order; Open circuit voltage; Solar cell; Thin film silicon; Two phase

Indexed keywords

ENERGY GAP; HYBRID MATERIALS; INFRARED IMAGING; METHANE; OPEN CIRCUIT VOLTAGE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON CARBIDE; SILICON SOLAR CELLS; SOLAR CELLS; THIN FILMS;

HYDROGENATED SILICON CARBIDE; MEDIUM RANGE ORDER; OPTIMIZED DEPOSITION CONDITIONS; RADIO-FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILM SILICON; THIN-FILM SILICON SOLAR CELLS; TRANSVERSE ACOUSTIC MODES; TWO-PHASE;

NANOSTRUCTURED MATERIALS; SOLAR CELLS;

EID: 84907217237     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.08.011     Document Type: Article

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