The nanostructural analysis of hydrogenated silicon films based on positron annihilation studies

Journal of Non-Crystalline Solids

Volumn 358, Issue 17, 2012, Pages 2015-2018

  Melskens, J ^a   Smets, A H M ^a   Eijt, S W H ^b   Schut, H ^b   Bruck E ^b   Zeman, M ^a  

^a Department of Microelectronics   (Netherlands)

^b Faculty of Applied Sciences   (Netherlands)

Author keywords

Doppler broadening positron annihilation spectroscopy (DB PAS); Fourier Transform infrared spectroscopy; Hydrogenated amorphous silicon (a Si:H); Hydrogenated microcrystalline silicon ( c Si:H); Nanostructure

Indexed keywords

A-SI:H; COMPLEMENTARY METHODS; COMPLEX NATURE; CRYSTALLINE FILMS; DIVACANCIES; FT-IR STUDY; HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED MICROCRYSTALLINE SILICON; HYDROGENATED SILICON; IN-LINE; MATERIAL CHARACTERISATION; NANOSTRUCTURAL ANALYSIS; NANOSTRUCTURAL PROPERTIES; POROUS FILM; POSITRON ANNIHILATION LIFETIME SPECTROSCOPY; STAEBLER-WRONSKI EFFECT;

AMORPHOUS FILMS; DOPPLER EFFECT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; MICROCRYSTALLINE SILICON; NANOSTRUCTURES; POSITRON ANNIHILATION SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 84865752467     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2012.01.037     Document Type: Conference Paper

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