Studies on the formation of microcrystalline silicon with PECVD under low and high working pressure

Thin Solid Films

Volumn 376, Issue 1-2, 2000, Pages 249-254

  Lihui, Guo ^a   Rongming, Lin ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; FILM GROWTH; FILM PREPARATION; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON;

MICROCRYSTALLINE SILICON FILMS;

SEMICONDUCTING FILMS;

EID: 0034317086     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01210-4     Document Type: Article

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