Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate

Journal of Applied Physics

Volumn 109, Issue 2, 2011, Pages

  Soro, M Y ^a   Gueunier Farret, M E ^a   Kleider, J P ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AMORPHOUS MATRICES; AMORPHOUS SILICON (A-SI:H); BANDGAP STATE; CAPTURE CROSS SECTIONS; ELECTRONIC DEFECTS; HIGH RATE; INFRARED MEASUREMENTS; LOW DENSITY; NUMERICAL CALCULATION; POLYMORPHOUS SILICON; POLYMORPHOUS SILICON FILMS; SCHOTTKY DIODES;

CAPACITANCE MEASUREMENT; DEFECTS; ELECTRONIC PROPERTIES; HYDROGENATION; RAMAN SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS;

AMORPHOUS SILICON;

EID: 79551668269     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3536474     Document Type: Article

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