New insights in the nanostructure and defect states of hydrogenated amorphous silicon obtained by annealing

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 65-71

  Melskens, Jimmy ^a   Smets, Arno H M ^a   Schouten, Marc ^a   Eijt, Stephan W H ^b   Schut, Henk ^b   Zeman, Miro ^a  

^a Department of Microelectronics   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Dangling bonds; defects; hydrogenated amorphous silicon (a Si:H); nanosized voids; nanostructure; vacancies

Indexed keywords

A-SI:H; AS-DEPOSITED FILMS; CLASSICAL MODEL; CONTINUOUS RANDOM NETWORKS; COORDINATION DEFECTS; DEFECT STATE; DISORDERED NETWORKS; DIVACANCIES; HYDROGENATED AMORPHOUS SILICON (A-SI:H); ISOTROPIC DISTRIBUTIONS; MODEL-BASED OPC; NANOSIZED VOIDS; NETWORK MODELS; PHOTOCURRENT SPECTROSCOPY; TEMPERATURE ANNEALING;

AMORPHOUS SILICON; ANNEALING; DANGLING BONDS; DEFECTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; NANOSTRUCTURES; POSITRON ANNIHILATION SPECTROSCOPY; SILICON; VACANCIES;

DEFECT DENSITY;

EID: 84871775899     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2226870     Document Type: Article

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