The nature and the kinetics of light-induced defect creation in hydrogenated amorphous silicon films and solar cells

IEEE Journal of Photovoltaics

Volumn 4, Issue 6, 2014, Pages 1331-1336

  Melskens, Jimmy ^a   Schouten, Marc ^a   Mannheim, Awital ^b   Vullers, Albert S ^a   Mohammadian, Yalda ^a   Eijt, Stephan W H ^b   Schut, Henk ^b   Matsui, Takuya ^c   Zeman, Miro ^a   Smets, Arno H M ^a  

^a Department of Microelectronics   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Dangling bonds; defects; hydrogenated amorphous silicon (a Si:H); light induced degradation; metastability; nanostructure; vacancies

Indexed keywords

DEFECTS; NANOSTRUCTURES; VACANCIES;

HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED AMORPHOUS SILICON FILMS; LIGHT INDUCED DEFECTS; LIGHT-INDUCED DEGRADATION; METASTABILITIES;

DANGLING BONDS;

EID: 84908235445     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2014.2349655     Document Type: Article

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