High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode

ACS Applied Materials and Interfaces

Volumn 6, Issue 23, 2014, Pages 20786-20794

  Huang, Genmao ^a   Duan, Lian ^a   Dong, Guifang ^a   Zhang, Deqiang ^a   Qiu, Yong ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

enhancement mode; oxygen defects; solution processed; thin film transistor; tin oxide

Indexed keywords

ALUMINA; ALUMINUM OXIDE; FLAT PANEL DISPLAYS; METALS; ORGANIC LIGHT EMITTING DIODES (OLED); THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; TIN OXIDES;

DIELECTRIC/SEMICONDUCTOR INTERFACE; ENHANCEMENT MODES; HIGH MOBILITY SOLUTION; METAL OXIDE THIN-FILM TRANSISTORS; OXYGEN DEFECT; PRECURSOR CONCENTRATION; PROCESSING CONDITION; SOLUTION-PROCESSED;

THIN FILM TRANSISTORS;

EID: 84917710476     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am5050295     Document Type: Article

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