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Volumn 113, Issue 18, 2013, Pages

Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors

(7) Umeda, Kenichi a,b Miyasako, Takaaki a Sugiyama, Ayumu a Tanaka, Atsushi b Suzuki, Masayuki b Tokumitsu, Eisuke a,c Shimoda, Tatsuya a,c

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b FUJIFILM CORPORATION (Japan)

c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INGAZNO; FIELD-EFFECT MOBILITIES; METAL COMPOSITION; ON/OFF RATIO; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); ULTRAVIOLET-OZONE;

GALLIUM; THIN FILM TRANSISTORS; ZINC;

AMORPHOUS FILMS;

EID: 84878076703 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4804667 Document Type: Article

Times cited : (81)

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