Erratum: Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)

Advanced Materials

Volumn 26, Issue 26, 2014, Pages 4412-

  Jang, Jaewon ^a   Kitsomboonloha, Rungrot ^a   Swisher, Sarah L ^a   Park, Eung Seok ^a   Kang, Hongki ^a   Subramanian, Vivek ^a  

^a NONE

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EID: 84904107550     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201402185     Document Type: Erratum

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