High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

Journal of Physics D: Applied Physics

Volumn 43, Issue 44, 2010, Pages

  Xia, D X ^a   Xu, J B ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; ACTIVE CHANNELS; CO-DOPED ZNO; ELECTRICAL PROPERTY; GATE BIAS; HIGH MOBILITY; LOW COSTS; LOW OPERATING VOLTAGE; LOW-POWER CONSUMPTION; LOW-VOLTAGE; LOW-VOLTAGE APPLICATIONS; OPERATION CURRENTS; TRANSPARENT ELECTRONICS;

DIELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); THIN FILMS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78349277641     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/44/442001     Document Type: Article

References (34)

1. Bashir A, Wöbkenberg P H, Smith J, Ball J M, Adamopoulos G, Bradley D C and Anthopoulos T D 2009 Adv. Mater. 21 2226
2. Liu P T, Chou Y T and Leng L F 2009 Appl. Phys. Lett. 95 233504
3. Zhang L, Zhang H, Bai Y, Ma J W, Cao J, Jiang X Y and Zhang Z L 2008 Solid State Commun. 146 387
4. Li Y J et al 2005 Semicond. Sci. Technol. 20 720
5. Levy D H, Freeman D, Nelson S F, Cowdery-Corvan P J and Irving L M 2008 Appl. Phys. Lett. 92 192101
6. Li C S, Li Y N, Wu Y L, Ong B S O and Loutfy R O 2008 J. Phys. D: Appl. Phys. 41 125102
7. Norris B J, Anderson J, Wager J F and Keszler D A 2003 J. Phys. D: Appl. Phys. 36 L105
8. Okamura K, Mechau N, Nikolova D and Hahn H 2008 Appl. Phys. Lett. 93 083105
9. Li C S, Li Y N, Wu Y L, Ong B S and Loutfy R O 2007 J. Appl. Phys. 102 076101
10. Jun J H, Park B, Cho K and Kim S 2009 Nanotechnology 20 505201
11. Ong B S, Li C S, Li Y N, Wu Y and Loutfy R O 2007 J. Am. Chem. Soc. 129 2750
12. Li C S, Li Y N, Wu Y, Ong B S and Loutfy R O 2009 J. Mater. Chem. 19 1626
13. Pal B N, Trottman P, Sun J and Katz H E 2008 Adv. Funct. Mater. 18 1832
14. Lim J H, Shim J H, Choi J H, Joo J, Park K, Jeon H, Moon M R, Jung D, Kim H and Lee H J 2009 Appl. Phys. Lett. 95 012108
15. Nayak P K, Jang J, Lee C and Hong Y 2009 Appl. Phys. Lett. 95 193503
16. Jeong S, Jeong Y and Moon J 2008 J. Phys. Chem. C 112 11082
17. Lim W, Douglas E A, Norton D P, Pearton S J, Ren F, Heo Y W, Son S Y and Yuh J H 2010 Appl. Phys. Lett. 96 053510
18. Lu A, Sun J, Jiang J and Wan Q 2010 Appl. Phys. Lett. 96 043114
19. Pal B N, Dhar B M, See K C and Katz H E 2009 Nature Mater. 8 898
20. Yuan H, Shimotani H, Tsukazaki A, Ohtomo A, Kawasaki M and Iwasa Y 2009 Adv. Funct. Mater. 19 1046
21. Park W J, Shin H S, Ahn B D, Kim G H, Lee S M, Kim K H and Kim H J 2008 Appl. Phys. Lett. 93 083508
22. Koo J B, Ku C H, Lim S C, Kim S H and Lee J H 2007 Appl. Phys. Lett. 90 133503
23. Lee J, Kim J H and Im S 2004 J. Appl. Phys. 95 3733
24. Majewski L A, Schroeder R, Grell M, Glarvey P A and Turner M L 2004 J. Appl. Phys. 96 5781
25. Rauch C et al 2010 J. Appl. Phys. 107 024311
26. Janotti A and Chris G W 2009 Rep. Prog. Phys. 72 126501
27. Majewski L A, Schroeder R and Grell M 2005 Adv. Mater. 17 2
28. Facchetti A, Yoon M H and Marks T J 2005 Adv. Mater. 17 1705
29. Liu J, Buchholz D B, Chang R P, Faccehetti A and Marks T J 2010 Adv. Mater. 22 2333
30. Hodges D A, Jackson H G and Saleh R A 2005 Analysis and Design of Digital Integrated Circuits 3rd edn (New York: McGraw-Hill)
31. Zhang L, Li J, Zhang X W, Jiang X Y and Zhang Z L 2009 Appl. Phys. Lett. 95 072112
32. Sirringhaus H 2005 Adv. Mater. 17 2411
33. Knipp D, Street R A, Volkel A and Ho J 2003 J. Appl. Phys. 93 347
34. Steudel S S and Vusser S D 2004 Appl. Phys. Lett. 85 4400