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Volumn 2, Issue 27, 2014, Pages 5389-5396
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The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS MATERIALS;
DIELECTRIC MATERIALS;
GATE DIELECTRICS;
NANOCRYSTALLINE MATERIALS;
DIELECTRIC/SEMICONDUCTOR INTERFACE;
ELECTRICAL PERFORMANCE;
INSULATING PROPERTIES;
INTERFACE TRAP DENSITY;
ON/OFF CURRENT RATIO;
OXIDE THIN-FILM TRANSISTORS;
PROCESSING TEMPERATURE;
SPIN-COATING METHOD;
ELECTRON DEVICES;
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EID: 84902978050
PISSN: 20507534
EISSN: 20507526
Source Type: Journal
DOI: 10.1039/c4tc00334a Document Type: Article |
Times cited : (134)
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References (37)
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