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Volumn 2, Issue 27, 2014, Pages 5389-5396

The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DIELECTRIC MATERIALS; GATE DIELECTRICS; NANOCRYSTALLINE MATERIALS;

EID: 84902978050     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c4tc00334a     Document Type: Article
Times cited : (134)

References (37)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.