High-mobility transparent thin-film transistors with an Sb-doped SnO 2 nanocrystal channel fabricated at room temperature

Nanotechnology

Volumn 20, Issue 33, 2009, Pages

  Sun, Jia ^a   Lu, Aixia ^a   Wang, Liping ^a   Hu, Yu ^a   Wan, Qing ^a  

^a HUNAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; DEPLETION MODES; FLEXIBLE ELECTRONICS; GLASS SUBSTRATES; HIGH MOBILITY; HIGH-SPEED; ITO ELECTRODES; ON/OFF RATIO; ROOM TEMPERATURE; SB-DOPED SNO; SUBTHRESHOLD SWING; TEMPERATURE-SENSITIVE; TRANSISTOR CHARACTERISTICS; TRANSPARENT THIN FILM TRANSISTOR; ULTRAHIGH-FIELDS;

GATE DIELECTRICS; GATES (TRANSISTOR); NANOCRYSTALS; PLASMA DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

ANTIMONY; NANOCRYSTAL; TIN OXIDE;

ARTICLE; DIELECTRIC CONSTANT; ELECTRODE; ELECTRONICS; FILM; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; VAPOR;

EID: 70249126896     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/33/335204     Document Type: Article

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