High mobility indium zinc oxide thin film field-effect transistors by semiconductor layer engineering

ACS Applied Materials and Interfaces

Volumn 4, Issue 12, 2012, Pages 6835-6841

  Walker, Daniel E ^a   Major, Marton ^b   Baghaie Yazdi, Mehrdad ^a   Klyszcz, Andreas ^a   Haeming, Marc ^a   Bonrad, Klaus ^a   Melzer, Christian ^a   Donner, Wolfgang ^a   Von Seggern, Heinz ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

density; morphology; multilayer; porosity; solution process; thin film transistor

Indexed keywords

DIRECT IMAGING; ELECTRON DENSITY PROFILES; HIGH MOBILITY; INDIUM ZINC OXIDES; INITIAL SOLUTION; LAYER FORMATION; LOW CONCENTRATIONS; MULTIPLE LAYERS; OPTIMAL CONCENTRATION; PRECURSOR CONCENTRATION; QUALITATIVE MODEL; SCANNING PROBE TECHNIQUES; SEMICONDUCTOR LAYERS; SILICON DIOXIDE GATES; SILICON SUBSTRATES; SINGLE LAYER FILMS; SOLUTION PROCESS; SOLUTION ROUTES; THICKNESS VARIATION; VOID-FREE; X RAY REFLECTION;

DENSITY (SPECIFIC GRAVITY); FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; MORPHOLOGY; MULTILAYERS; POROSITY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SILICA; THIN FILM TRANSISTORS;

FILM PREPARATION;

EID: 84871659506     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am302004j     Document Type: Article

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