Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2x1) surface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 32, Issue 3, 2014, Pages

  Longo, Roberto C ^a   McDonnell, Stephen ^a   Dick, D ^a   Wallace, R M ^a   Chabal, Yves J ^a   Owen, James H G ^b   Ballard, Josh B ^b   Randall, John N ^b   Cho, Kyeongjae ^a  

^a The University of Texas at Dallas   (United States)

^b Zyvex Labs LLC ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DENSITY FUNCTIONAL THEORY; GROWTH RATE; HAFNIUM OXIDES; HYDROGEN; OXIDATION; SILICON; SILICON OXIDES; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL COMPOSITIONS; DIFFERENT PRECURSORS; HYDROGEN-TERMINATED SI; HYDROGEN-TERMINATED SILICON; METAL OXIDES; OXIDIZED SILICON; SI SURFACES; SI(001)-(2X1);

DEPOSITION;

EID: 84907146371     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4864619     Document Type: Article

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