Controlling the atomic layer deposition of titanium dioxide on silicon: Dependence on surface termination

Journal of Physical Chemistry C

Volumn 117, Issue 39, 2013, Pages 20250-20259

  McDonnell, Stephen ^a   Longo, Roberto C ^a   Seitz, Oliver ^a   Ballard, Josh B ^b   Mordi, Greg ^a   Dick, Don ^a   Owen, James H G ^b   Randall, John N ^b   Kim, Jiyoung ^a   Chabal, Yves J ^a   Cho, Kyeongjae ^a   Wallace, Robert M ^a  

^a The University of Texas at Dallas   (United States)

^b Zyvex Labs LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN-TERMINATED SI; HYDROGEN-TERMINATED SILICON SURFACES; INITIAL ADSORPTION; NANO-METER-SCALE; REACTIVE GROUP; SELECTIVE DEPOSITION; SURFACE TERMINATION; THEORETICAL STUDY;

DEPOSITION; DEPOSITION RATES; HYDROGEN; PHOTOELECTRONS; SCANNING TUNNELING MICROSCOPY; SILICON; SILICON OXIDES; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84885135023     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp4060022     Document Type: Article

References (48)

1. Lyding, J. W.; Shen, T. C.; Hubacek, J. S.; Tucker, J. R.; Abeln, G. C. Nanoscale Patterning and Oxidation of H-Passivated Si(100)-2 × 1 Surfaces with an Ultrahigh Vacuum Scanning Tunneling Microscope Appl. Phys. Lett. 1994, 64, 2010-2012
2. Dagata, J. A.; Schneir, J.; Harary, H. H.; Evans, C. J.; Postek, M. T.; Bennett, J. Modification of Hydrogen-Passivated Silicon by a Scanning Tunneling Microscope Operating in Air Appl. Phys. Lett. 1990, 56, 2001-2003
3. Avouris, P.; Hertel, T.; Martel, R. Atomic Force Microscope Tip-Induced Local Oxidation of Silicon: Kinetics, Mechanism, and Nanofabrication Appl. Phys. Lett. 1997, 71, 285-287
4. Okada, Y.; Amano, S.; Kawabe, M.; Harris, J. S. Basic Mechanisms of an Atomic Force Microscope Tip-Induced Nano-Oxidation Process of GaAs J. Appl. Phys. 1998, 83, 7998-8001
5. Xie, X. N.; Chung, H. J.; Xu, H.; Xu, X.; Sow, C. H.; Wee, A. T. S. Probe-Induced Native Oxide Decomposition and Localized Oxidation on 6H-SiC(0001) Surface: An Atomic Force Microscopy Investigation J. Am. Chem. Soc. 2004, 126, 7665-7675
6. Ritala, M.; Leskelä, M. Atomic layer deposition. In Handbook of Thin Films; Nalwas, H. S., Ed.; Academic Press: New York, 2002; Vol. 1, Chapter 2, pp 103-159.
7. 3 Passivation Layers on the Surface of InGaN/GaN-Based Light-Emitting Diode Chips Thin Solid Films 2008, 516, 2031-2034
8. 3 Atomic Layer Deposition Chem. Mater. 2004, 16, 639-645
9. Rose, M.; Bartha, J. W.; Endler, I. Temperature Dependence of the Sticking Coefficient in Atomic Layer Deposition Appl. Surf. Sci. 2010, 256, 3778-3782
10. Abeln, G. C.; Hersam, M. C.; Thompson, D. S.; Hwang, S. T.; Choi, T.; Moore, J. S.; Lyding, J. W. Approaches to Nanofabrication on Si(100) Surfaces: Selective Area Chemical Vapor Deposition of Metals and Selective Chemisorption of Organic Molecules J. Vac. Sci. Technol. B 1998, 16, 3874-3878
11. Mitsui, T.; Curtis, R.; Ganz, E. Selective Nanoscale Growth of Titanium on the Si(001) Surface Using an Atomic Hydrogen Resist J. Appl. Phys. 1999, 86, 1676-1679
12. Methaapanon, R.; Bent, S. F. Comparative Study of Titanium Dioxide Atomic Layer Deposition on Silicon Dioxide and Hydrogen-Terminated Silicon J. Phys. Chem. C 2010, 114, 10498-10504
13. Frank, M. M.; Chabal, Y. J.; Wilk, G. D. Nucleation and Interface Formation Mechanisms in Atomic Layer Deposition of Gate Oxides Appl. Phys. Lett. 2003, 82, 4758-4760
14. Ho, M. T.; Wang, Y.; Brewer, R. T.; Wielunski, L. S.; Chabal, Y. J.; Moumen, N.; Boleslawski, M. In Situ Infrared Spectroscopy of Hafnium Oxide Growth on Hydrogen-Terminated Silicon Surfaces by Atomic Layer Deposition Appl. Phys. Lett. 2005, 87, 133103
15. 2O as Precursors J. Phys. Chem. B 2004, 108, 5718-5725
16. Widjaja, Y.; Han, J. H.; Musgrave, C. B. Quantum Chemical Study of Zirconium Oxide Deposition on the Si(100)-2 × 1 Surface J. Phys. Chem. B 2003, 107, 9319-9324
17. Widjaja, Y.; Musgrave, C. B. Quantum Chemical Study of the Elementary Reactions in Zirconium Oxide Atomic Layer Deposition Appl. Phys. Lett. 2002, 81, 304-306
18. 2: Initial Stage of High-k Atomic Layer Deposition Appl. Phys. Lett. 2003, 83, 542-544
19. 3 Atomic Layer Deposition on SAMs: Effect of SAM Termination C. B Chem. Mater. 2004, 16, 646-653
20. 3 on H/Si(111) J. Phys. Chem. A 2004, 108, 2982-2987
21. 2 Surfaces: Density Functional Theory Calculations J. Phys. Chem. B 2006, 110, 8337-8347
22. 2 Surfaces: Ab Initio Calculations of the Initial Reaction Mechanisms J. Am. Chem. Soc. 2007, 129, 3863-3878
23. 4 on H/Si(100)-2 × 1 Surface Chem. Phys. Lett. 2008, 461, 249-253
24. 4 on OH/Si(100)-2 × 1 Chem. Phys. Lett. 2008, 457, 69-73
25. 4F Versus HF J Appl. Phys. Lett. 1991, 58, 1656-1658
26. Wallace, R. M. In-Situ Studies of Interfacial Bonding of High-k Dielectrics for CMOS Beyond 22 nm ECS Trans. 2008, 16, 255-271
27. Sivasubramani, P.; Kim, J.; Kim, M. J.; Gnade, B. E.; Wallace, R. M. Effect of Composition on the Thermal Stability of Sputter Deposited Hafnium Aluminate and Nitrided Hafnium Aluminate Dielectrics on Si(100) J. Appl. Phys. 2007, 101, 114108
28. 3 by Atomic Layer Deposition Appl. Phys. Lett. 2010, 97, 082901
29. 2 Films Appl. Phys. Lett. 2002, 81, 1014-1016
30. 2/Si Interface Phys. Rev. B 1988, 38, 6084-6096
31. 2/Si Surface Appl. Surf. Sci. 2004, 235, 21-25
32. Kresse, G.; Hafner, J. Ab Initio Molecular Dynamics for Liquid Metals Phys. Rev. B 1993, 47, 558-561
33. Kresse, G.; Furthmuller, J. Efficiency of Ab-Initio Total Energy Calculations for Metals and Semiconductors Using a Plane-Wave Basis Set Comput. Mater. Sci. 1996, 6, 15-50
34. Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized Gradient Approximation Made Simple Phys. Rev. Lett. 1996, 77, 3865-3868
35. Jónsson, H.; Mills, G.; Jacobson, K. W. In Classical and Quantum Dynamics in Condensed Phase Simulations; Berne, B. J.; Cicotti, G.; Coker, D. F, Eds.; World Scientific Press: Singapore, 1998; pp 385-404.
36. Henkelman, G.; Jonsson, H. Improved Tangent Estimate in the Nudged Elastic Band Method for Finding Minimum Energy Paths and Saddle Points J. Chem. Phys. 2000, 113, 9978-9985
37. Henkelman, G.; Uberuaga, B. P.; Jonsson, H. A Climbing Image Nudged Elastic Band Method for finding Saddle Points and Minimum Energy Paths J. Chem. Phys. 2000, 113, 9901-9904
38. Lelis-Sousa, R.; Caldas, M. J. Ab Initio Study of the Early Stages of Gas-Phase Water Oxidation of the Si(100) (2 × 1):H Surface Phys. Rev. B 2011, 84, 205314
39. Hausmann, D. M.; Kim, E.; Becker, J.; Gordon, R. G. Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors Chem. Mater. 2002, 14, 4350-4358
40. 2 Langmuir 2005, 21, 211-216
41. x Films Prepared by Chemical Vapor Deposition Using Tetrakis-Dimethyl-Amido-Titanium and Water Thin Solid Films 2006, 498, 254-258
42. 3, and ZnO Thin Films J. Korean Phys. Soc. 2011, 59, 452-457
43. Watanabe, S.; Nakayama, N.; Ito, T. Homogeneous Hydrogen-Terminated Si(111) Surface Formed Using Aqueous HF Solution and Water Appl. Phys. Lett. 1991, 59, 1458-1460
44. Hersam, M. C.; Guisinger, N. P.; Lyding, J. W.; Thompson, D. S.; Moore, J. S. Atomic-Level Study of the Robustness of the Si(100)-2 × 1:H Surface Following Exposure to Ambient Conditions Appl. Phys. Lett. 2001, 78, 886-888
45. Li, K.; Pradeep, N.; Chikkamaranahalli, S.; Stan, G.; Attota, R.; Fu, J.; Silver, R. Controlled Formation of Atomic Step Morphology on Micropatterned Si(100) J. Vac. Sci. Technol. B 2011, 29, 041806
46. Horcas, I.; Fernandez, R.; Gomez-Rodriguez, J.; Colchero, J.; Gómez-Herrero, J.; Baro, A. WSXM: A Software for Scanning Probe Microscopy and a Tool for Nanotechnology Rev. Sci. Instrum. 2007, 78, 013705
47. 2O Reactivity on Si(100)-(2 × 1), (2 × 1)-H, (1 × 1)-H and (3 × 1)-H Surfaces Surf. Sci. 2004, 570, 178-188
48. Boland, J. J. Scanning Tunneling Microscopy Study of the Adsorption and Recombinative Desorption of Hydrogen from the Si(100)2 × 1 Surface J. Vac. Sci. Technol. A 1992, 10, 2458-2464