The initial mechanisms of Al2O3 atomic layer deposition on OH/Si(1 0 0)-2 × 1 surface by tri-methylaluminum and water

Chemical Physics Letters

Volumn 426, Issue 4-6, 2006, Pages 365-369

  Ghosh, Manik Kumer ^a   Choi, Cheol Ho ^a  

^a Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEXATION; FILM GROWTH; REACTION KINETICS; SILICON; SURFACES; THERMODYNAMIC STABILITY;

ATOMIC LAYER DEPOSITION; JUNCTION REGION; SURFACE BONDING; WATER PRECURSORS;

ALUMINA;

EID: 33746067142     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2006.05.126     Document Type: Article

References (28)

1. Ritala M., and Leskelä M. In: Nalwa H.S. (Ed). Handbook of Thin Film Materials vol. 1 (2001), Academic Press, San Diego, CA Chapter 2
2. Leskelä M., and Ritala M. Thin Solid Films 409 (2002) 138
3. Ritala M., Kukli K., Rathu A., Raisanen P.I., Leskelä M., Sajavaara T., and Leinonen J. Science 288 (2000) 319
4. Georges S.M., Ott A.W., and Klaus J.W. J. Phys. Chem. 100 (1996) 13121
5. Heyman A., and Musgrave C.B. J. Phys. Chem. B 108 (2004) 5718
6. Packan P.A. Science 285 (1999) 2079
7. Ye P.D., et al. IEEE Electron. Dev. Lett. 24 (2003) 4
8. Klein T.M., et al. Appl. Phys. Lett. 25 (1999) 4001
9. Manchanda L., et al. Microelectron. Eng. 59 (2001) 351
10. Ritala M., Saloniemi H., Leskelä M., Prohaska T., Friedbacher G., and Grasserbauer M. Thin Solid Films 286 (1996) 54
11. Yates D.J.C., Dembinski G.W., Kroll W.R., and Elliott J.J. J. Phys. Chem. 73 (1969) 911
12. Anikeev G.V., Ezhovskii Y.K., and Kol'tson S.I. Inorg. Mater. 24 (1988) 514
13. Kukli K., Ritala M., Leskelä M., and Jokinen J. J. Vac. Sci. Technol. A 15 (1997) 2214
14. Hung R., and Kitai A.H. J. Electron. Mater. 22 (1993) 215
15. Hiltunen L., et al. Mater. Chem. Phys. 28 (1991) 379
16. Widjaja Y., and Musgrave C.B. Appl. Phys. Lett. 80 (2002) 3304
17. Heyman A., and Musgrave C.B. J. Phys. Chem. B 108 (2004) 5718
18. Matsuwaki T., Nakajimia T., and Yamashita K. J. Phys. IV 11 (2001) 63
19. Halls M.D., and Raghavachari K. J. Chem. Phys. 118 (2003) 10221
20. Halls M.D., and Raghavachari K. J. Phys. Chem. B 108 (2004) 4058
21. Lee S.S., Baik J.Y., An K.S., Suh Y.D., Oh J.H., and Kim Y. J. Phys. Chem. B 108 (2004) 15128
22. Choi C.H., and Gordon M.S. Computational Materials Chemistry: Methods and Applications. In: Curtiss L.A., and Gordon M.S. (Eds). Theoretical Studies of Silicon Surface Reactions with Main Group Absorbates (2004), Kluwer Academic Publishers 125 Chapter 4
23. Schmidt M.W., et al. J. Comput. Chem. 14 (1993) 1347
24. Herhe W.J., Ditchfield R., and Pople J.A. J. Chem. Phys. 56 (1972) 2257
25. Gonzalez C., and Schlegel H.B. J. Phys. Chem. 94 (1990) 5523
26. Gonzalez C., and Schelegel H.B. J. Chem. Phys. 95 (1991) 5853
27. Shoemaker J.R., Burgruff L.W., and Gordon M.S. J. Phys. Chem. A 103 (1999) 3245
28. Allinger N.L., Yuh Y.H., and Lii J.H. J. Am. Chem. Soc. 111 (1989) 8551